Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.30$ | 1.30$ |
5 - 9 | 1.23$ | 1.23$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 49 | 1.17$ | 1.17$ |
50 - 99 | 1.14$ | 1.14$ |
100 - 249 | 1.10$ | 1.10$ |
250+ | 1.07$ | 1.07$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.30$ | 1.30$ |
5 - 9 | 1.23$ | 1.23$ |
10 - 24 | 1.20$ | 1.20$ |
25 - 49 | 1.17$ | 1.17$ |
50 - 99 | 1.14$ | 1.14$ |
100 - 249 | 1.10$ | 1.10$ |
250+ | 1.07$ | 1.07$ |
NPN transistor, 0.8A, TO-92, TO-92MOD ( 2-5J1A ), 120V - 2SC2235-Y. NPN transistor, 0.8A, TO-92, TO-92MOD ( 2-5J1A ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 30pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2235 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 120V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 14/06/2025, 10:25.
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