Quantity | excl. VAT | VAT incl. |
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1 - 2 | 2.95$ | 2.95$ |
Quantity | U.P | |
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1 - 2 | 2.95$ | 2.95$ |
2SA985. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1.5A. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2275. Quantity in stock updated on 25/12/2024, 06:25.
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