Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.78$ | 8.78$ |
2 - 2 | 8.34$ | 8.34$ |
3 - 4 | 7.90$ | 7.90$ |
5 - 7 | 7.46$ | 7.46$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.78$ | 8.78$ |
2 - 2 | 8.34$ | 8.34$ |
3 - 4 | 7.90$ | 7.90$ |
5 - 7 | 7.46$ | 7.46$ |
BU808DFX. BE resistor: 42 Ohms. Darlington transistor?: yes. Semiconductor material: silicon. FT: kHz. Max hFE gain: 230. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 1400V. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 700V. Vebo: 5V. Quantity per case: 2. Number of terminals: 2. Spec info: ICM--(tp < 5ms). Housing: TO-3PF (SOT399, 2-16E3A). Quantity in stock updated on 11/01/2025, 11:25.
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