Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.53$ | 5.53$ |
5 - 9 | 5.25$ | 5.25$ |
10 - 24 | 4.97$ | 4.97$ |
25 - 49 | 4.70$ | 4.70$ |
50 - 99 | 4.31$ | 4.31$ |
100 - 365 | 4.05$ | 4.05$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.53$ | 5.53$ |
5 - 9 | 5.25$ | 5.25$ |
10 - 24 | 4.97$ | 4.97$ |
25 - 49 | 4.70$ | 4.70$ |
50 - 99 | 4.31$ | 4.31$ |
100 - 365 | 4.05$ | 4.05$ |
BUH1215. Semiconductor material: silicon. FT: kHz. Function: High Voltage Fast Switching Transistor. Max hFE gain: 14. Minimum hFE gain: 5. Collector current: 16A. Ic(pulse): 22A. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Tf(max): 210 ns. Tf(min): 110 ns. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218 ( SOT93 ). Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 700V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: Icm.22A <5ms. Quantity in stock updated on 26/12/2024, 15:25.
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