Transistors

Quantity per case: 1. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Spec info: Rbe 50 Ohms

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M46/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/600V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 80W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 80W. Operating temperature range min (°C): NPN. Operating temperature range max (°C): 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 6A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 7A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M31/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1.5 kV. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 50W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: NPN

Quantity per case: 1. Semiconductor material: silicon. Collector current: 4A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 4A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 3A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M31/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 1500V/600V. Collector current Ic [A], max.: 5A. Maximum dissipation Ptot [W]: 50W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: NPN. Operating temperature range min (°C): 600V

RoHS: no. Component family: Darlington NPN Transistor. Housing: PCB soldering. Housing: M37/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 60W

Quantity per case: 1. Semiconductor material: silicon. Collector current: 1A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v

Quantity per case: 1. Semiconductor material: silicon. Function: (F). Collector current: 6A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V. Spec info: insulated

Quantity per case: 1. Semiconductor material: silicon. Function: 'CTV-HA' (insulated). Collector current: 6A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 7A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: 'CTV-HA' (insulated). Collector current: 10A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 3.5A. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Housing: TO-3PF (SOT399, 2-16E3A)

Quantity per case: 1. Semiconductor material: silicon. Collector current: 2A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V

Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Max hFE gain: 15. Minimum hFE gain: 4. Collector current: 5A. Ic(pulse): 17A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Housing: TO-3P ( TO-218 SOT-93 ). Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 1500V. Vebo: 6V

Quantity per case: 1. Semiconductor material: silicon. Function: NF/SL. Collector current: 0.1A. Note: hFE 100...200. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Spec info: 2SD1609-C

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Collector current: 2A. Ic(pulse): 4A. Note: complementary transistor (pair) 2SB1123S. Marking on the case: DF. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistor'. Tf(max): 30 ns. Tf(min): 30 ns. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DF. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Collector current: 2A. Note: hFE 200...400. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DF, complementary transistor (pair) 2SB1123T. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Collector current: 3A. Ic(pulse): 6A. Marking on the case: DG. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 35 ns. Tf(min): 35 ns. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DG

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: high DC Current, Relay drivers, Lamp drivers. Max hFE gain: 4000. Minimum hFE gain: 3000. Collector current: 1.5A. Ic(pulse): 3A. Marking on the case: DI. Pd (Power Dissipation, Max): 1.5W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SANYO PCP. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Spec info: screen printing/SMD code DI, complementary transistor (pair) 2SB1126. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Collector current: 2A. Note: hFE 3000...4000. Pd (Power Dissipation, Max): 1.5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Function: High DC Current, Relay drivers, Voltage regulation control. Spec info: screen printing/SMD code DJ