2SD1623S

Quantity	excl. VAT	VAT incl.
1 - 4	1.26$	1.26$
5 - 9	1.20$	1.20$
10 - 24	1.13$	1.13$
25 - 49	1.07$	1.07$
50 - 57	1.05$	1.05$

Quantity	U.P
1 - 4	1.26$	1.26$
5 - 9	1.20$	1.20$
10 - 24	1.13$	1.13$
25 - 49	1.07$	1.07$
50 - 57	1.05$	1.05$

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Quantity in stock : 57

Set of 1

2SD1623S. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Collector current: 2A. Ic(pulse): 4A. Note: complementary transistor (pair) 2SB1123S. Marking on the case: DF. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistor'. Tf(max): 30 ns. Tf(min): 30 ns. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DF. BE diode: no. CE diode: no. Quantity in stock updated on 29/12/2024, 03:25.

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Delivery in 2-3 days, with postal tracking!