2SD1624S

Quantity	excl. VAT	VAT incl.
1 - 4	1.01$	1.01$
5 - 9	0.96$	0.96$
10 - 24	0.91$	0.91$
25 - 49	0.86$	0.86$
50 - 61	0.84$	0.84$

Quantity	U.P
1 - 4	1.01$	1.01$
5 - 9	0.96$	0.96$
10 - 24	0.91$	0.91$
25 - 49	0.86$	0.86$
50 - 61	0.84$	0.84$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 61

Set of 1

2SD1624S. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 280. Minimum hFE gain: 140. Collector current: 3A. Ic(pulse): 6A. Marking on the case: DG. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 35 ns. Tf(min): 35 ns. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.35V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: screen printing/SMD code DG. Quantity in stock updated on 29/12/2024, 03:25.

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Delivery in 2-3 days, with postal tracking!