Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Ultrahigh-Definition CRT Display, High-speed.. Max hFE gain: 15. Minimum hFE gain: 4. Collector current: 20A. Ic(pulse): 40A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Housing (according to data sheet): TO-3PMLH. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 5V. Spec info: Horizontal Deflection Output Applications. Housing: TO-3PF (SOT399, 2-16E3A)