Transistors

C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. Id(imp): 28A. ID (T=25°C): 7A. Idss (max): 10uA. Marking on the case: TK7P60W. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 1350pF. Cost): 135pF. Channel type: N. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 30Ap. Idss (max): 10uA. Marking on the case: K8A65D. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSVII). Housing: TO-220FP. Housing (according to data sheet): 2-10U1B. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 30 v. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: Logic-Level. ID (T=25°C): 0.3A. Idss (max): 0.3A. Pd (Power Dissipation, Max): 0.8W. On-resistance Rds On: 2.3 Ohms. Assembly/installation: PCB through-hole mounting. Technology: 9.31k Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 240V. Quantity per case: 1

Function: SAMSUNG 0505-001417. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: SMD SO-8. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 400V. Collector current: 1A. Power: 1W. Housing: TO-92

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 50V. Collector current: 3A. Power: 0.75W. Max frequency: 90MHz. Housing: TO-92

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 161A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8.4 ns. Switch-off delay tf[nsec.]: 58 ns. Ciss Gate Capacitance [pF]: 7150pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 161A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 6435pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 121A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0033 Ohm @ 21A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 3 ns. Switch-off delay tf[nsec.]: 47 ns. Ciss Gate Capacitance [pF]: 4456pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 121A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0033 Ohm @ 21A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 5022pF. Maximum dissipation Ptot [W]: 107W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 104A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.005 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 8 ns. Switch-off delay tf[nsec.]: 56 ns. Ciss Gate Capacitance [pF]: 6870pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: PDFN56. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 107A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0048 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 4 ns. Switch-off delay tf[nsec.]: 78 ns. Ciss Gate Capacitance [pF]: 6253pF. Maximum dissipation Ptot [W]: 136W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -4.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -4.9A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 9 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 745pF. Maximum dissipation Ptot [W]: 2.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.021 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 0.6V. Switch-on time ton [nsec.]: 8.1 ns. Switch-off delay tf[nsec.]: 21.8 ns. Ciss Gate Capacitance [pF]: 562pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. FT: kHz. Function: High-Speed.. Max hFE gain: 15. Minimum hFE gain: 4. Collector current: 18A. Ic(pulse): 35A. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Housing (according to data sheet): TO-3PMLH. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). Spec info: Ultrahigh-Hor. Deflection CRT Display. CE diode: yes

Cost): 110pF. Semiconductor material: silicon. Function: Vbe(sat)1.5V. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 6A. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Number of terminals: 3. Quantity per case: 1. Spec info: with polarization resistor Rbe. BE diode: no. CE diode: no

Cost): 110pF. Semiconductor material: silicon. Function: Color TV Horizontal Deflection Output Applications. Max hFE gain: 8. Minimum hFE gain: 5. Collector current: 6A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 6V. Number of terminals: 3. Quantity per case: 1. Spec info: with polarization resistor Rbe. BE diode: no. CE diode: no

Cost): 80pF. Semiconductor material: silicon. Function: Color TV Horizontal Deflection Output Applications. Max hFE gain: 10. Minimum hFE gain: 5. Collector current: 8A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Spec info: Vbe(sat) 1.5V. BE diode: no. CE diode: no

Cost): 80pF. Semiconductor material: silicon. Collector current: 10A. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 1600V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Spec info: TT2206-YD TO-3PML. BE diode: no. CE diode: no

Marking on the case: H21. Assembly/installation: surface-mounted component (SMD). Technology: *SMD SO6*. Housing (according to data sheet): EMT6. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code H21

Marking on the case: H9C. Assembly/installation: surface-mounted component (SMD). Technology: *SMD SO6*. Housing (according to data sheet): EMT6. Quantity per case: 2. Number of terminals: 6. Note: screen printing/SMD code H9C

Cost): 180pF. Semiconductor material: silicon. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. BE diode: no. CE diode: no

Cost): 180pF. Semiconductor material: silicon. Function: 0.2W. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Spec info: screen printing/SMD code 6B. BE diode: no. CE diode: no

Cost): 180pF. Semiconductor material: silicon. Function: 0.2W. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Spec info: screen printing/SMD code 6D. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: INFI->PANAS. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. BE diode: no. CE diode: yes