Transistors

Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 10A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147T. BE diode: no. CE diode: yes

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP147. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 500. Maximum dissipation Ptot [W]: 125W. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP142

Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 10A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. BE resistor: R1 typ=8k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) TIP142T. BE diode: no. CE diode: yes

Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -100V. Collector current: -10A. Power: 125W. Housing: TO-3P

Housing: TO-247. Number of terminals: 3. Manufacturer's marking: TIP2955. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 90W. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -15A. Power: 90W. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Note: complementary transistor (pair) TIP3055. Spec info: Low collector-emitter saturation voltage

RoHS: no. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP30. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 30W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Collector current: 15A. Housing: TO-247. Conditioning: plastic tube. Semiconductor material: silicon. FT: 3 MHz. Function: audio amplifier. Max hFE gain: 70. Minimum hFE gain: 20. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 90W. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) TIP2955. Conditioning unit: 30. Spec info: Low collector-emitter saturation voltage

Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 24. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP32C. BE diode: no. CE diode: no

Cost): 160pF. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Collector current: 3A. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP31C. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP34C. BE diode: no. CE diode: no

Resistor B: yes. BE resistor: PCB soldering. C(in): TO-247. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Spec info: complementary transistor (pair) TIP33C. BE diode: no. CE diode: no

Collector current: 25A. Housing: TO-247. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1450. Max hFE gain: 50. Minimum hFE gain: 25. Ic(pulse): 50A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 100V. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 125W. Max frequency: 3MHz. Spec info: complementary transistor (pair) TIP36C

RoHS: yes. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP35CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: yes. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 45pF. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP33C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Minimum hFE gain: 25. Collector current: 25A. Ic(pulse): 50A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Spec info: complementary transistor (pair) TIP35C

RoHS: yes. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP36CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Cost): 80pF. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP42C. BE diode: no. CE diode: no

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Power: 65W. Max frequency: 3MHz. Housing: TO-220

Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain: 75. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) TIP41C. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Power: 65W

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -6A. Power: 65W. Max frequency: 3MHz. Housing: TO-220

Darlington transistor?: no. Semiconductor material: silicon. FT: 10 MHz. Function: SILICON NPN SWITCHING TRANSISTOR. Max hFE gain: 150. Minimum hFE gain: 30. Collector current: 1A. Ic(pulse): 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: yes

C(in): 2600pF. Cost): 280pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1700 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. Id(imp): 80A. ID (T=25°C): 20A. Idss (max): 10uA. Marking on the case: K20J50D. Temperature: +150°C. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 0.22 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 100 ns. Technology: Field Effect POWER MOS Type (MOSVII). Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 800pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 10uA. Marking on the case: K6A60D. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 1050pF. Cost): 100pF. Channel type: N. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator. Id(imp): 24A. ID (T=25°C): 6A. Idss (max): 10uA. IDss (min): 10uA. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.95 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 650V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. Id(imp): 28A. ID (T=25°C): 7A. Idss (max): 10uA. Marking on the case: TK7P60W. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

C(in): 1350pF. Cost): 135pF. Channel type: N. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 30Ap. Idss (max): 10uA. Marking on the case: K8A65D. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSVII). Housing: TO-220FP. Housing (according to data sheet): 2-10U1B. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 30 v. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no