Transistors

C(in): 1350pF. Cost): 130pF. Channel type: N. Trr Diode (Min.): 840 ns. Type of transistor: MOSFET. Function: protected with zener diode. Id(imp): 23.2A. ID (T=100°C): 3.65A. ID (T=25°C): 5.8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W7NK90Z. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 1.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W9NK90Z. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 1.1 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

Semiconductor material: silicon. Function: HIGH SWITCH. Collector current: 1A. Pd (Power Dissipation, Max): 1.5W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Spec info: High-Speed. BE diode: no. CE diode: no

Channel type: N. Type of transistor: MOSFET. Id(imp): 30A. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 15A. Pd (Power Dissipation, Max): 37W. On-resistance Rds On: 0.05 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Number of terminals: 3. Technology: (D-S) 175°C MOSFET, Logic Level. Quantity per case: 1

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SUP53P06-20. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -53A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0195 Ohms @ -30A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 110 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 104W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SUP75N03-04. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 190 ns. Ciss Gate Capacitance [pF]: 10742pF. Maximum dissipation Ptot [W]: 187W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 3535pF. Cost): 680pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=100°C): 85A. ID (T=25°C): 85A. Idss (max): 250uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 78W. On-resistance Rds On: 0.003 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: TrenchFET® Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Power Supply, DC/DC Converter. Spec info: (D-S) 150°C MOSFET. G-S Protection: no

Type of transistor: PNP transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -20V. Collector current: -1A. Power: 1W. Max frequency: 65MHz. Housing: TO-92. Applications: Audio

Type of transistor: PNP transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -45V. Collector current: -1A. Power: 0.8W. Max frequency: 150MHz. Housing: TO-92. Applications: Audio

Semiconductor material: silicon. Function: High voltage fast switching. Collector current: 7A. Assembly/installation: PCB through-hole mounting. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. Quantity per case: 1

C(in): 5500pF. Cost): 100pF. Channel type: N. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 430V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Number of terminals: 3. Function: Low-saturation voltage, Ultra high speed switching. Various: flash, stroboscope control. Technology: Enhancement type. Spec info: High speed hall time--tf=270nS(typ). CE diode: no

Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 20000. Minimum hFE gain: 1000. Collector current: 8A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. BE resistor: 8k Ohms (R1), 120 Ohms (R2). Function: switching, audio amplifier. Spec info: complementary transistor (pair) TIP107. BE diode: no. CE diode: yes

Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 20000. Minimum hFE gain: 1000. Collector current: 8A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Note: 10k Ohms (R1), 600 Ohms (R2). Function: switching, audio amplifier. Spec info: complementary transistor (pair) TIP102. BE diode: no. CE diode: no

Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 2A. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Note: >1000. Spec info: 10k Ohms (R1), 600 Ohms (R2)

Cost): 2pF. Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 4A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Collector/emitter voltage Vceo: 80V. Note: >1000. Quantity per case: 1. Spec info: TO-220. BE diode: no. CE diode: no

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP120. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 5A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 5A. Cutoff frequency ft [MHz]: silicon. Maximum dissipation Ptot [W]: 65W. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP127

Resistor B: yes. BE resistor: 8 k Ohms és 120 Ohms. C(in): TO-220. Cost): 200pF. Conditioning: plastic tube. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: +150°C. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Function: 8k Ohms (R1), 120 Ohms (R2). Conditioning unit: 50. Spec info: complementary transistor (pair) TIP127G. BE diode: no. CE diode: yes

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP126. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 5A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Housing: TO-220. Darlington transistor?: yes. Semiconductor material: silicon. FT: kHz. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -100V. Collector current: -5A. Power: 75W. Number of terminals: 3. Quantity per case: 1. Function: 16k Ohms (R1), 60 Ohms (R2). Conditioning unit: 50. Spec info: complementary transistor (pair) TIP122

BE resistor: 8 k Ohms és 120 Ohms. Cost): 300pF. Conditioning: plastic tube. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 1000. Collector current: 5A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Function: 8k Ohms (R1), 120 Ohms (R2). Conditioning unit: 50. Spec info: complementary transistor (pair) TIP122G. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP127. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 5A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP132. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 15000. Maximum dissipation Ptot [W]: 70W. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Housing: TO-220. Housing (according to data sheet): TO220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 4 v. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) TIP137

Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): 70pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: 8A. Max hFE gain: 15000. Minimum hFE gain: 1000. Collector current: 8A. Ic(pulse): 12V. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Housing: TO-220. Housing (according to data sheet): TO220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 4 v. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) TIP132. BE diode: no. CE diode: no

Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 10A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: Darlington Power Transistor. C(in): 100V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147. BE diode: no. CE diode: yes