VNS3NV04DPTR-E

Quantity	excl. VAT	VAT incl.
1 - 4	3.80$	3.80$
5 - 9	3.61$	3.61$
10 - 24	3.42$	3.42$
25 - 49	3.23$	3.23$
50 - 90	3.15$	3.15$

Quantity	U.P
1 - 4	3.80$	3.80$
5 - 9	3.61$	3.61$
10 - 24	3.42$	3.42$
25 - 49	3.23$	3.23$
50 - 90	3.15$	3.15$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 90

Set of 1

VNS3NV04DPTR-E. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 107ns. Type of transistor: MOSFET. ID (T=25°C): 3.5A. Idss (max): 75uA. IDss (min): 30uA. Note: screen printing/SMD code S3NV04DP. Marking on the case: S3NV04DP. Pd (Power Dissipation, Max): 4W. On-resistance Rds On: 0.12 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 450 ns. Td(on): 90 ns. Technology: OMNIFET II fully autoprotected Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 45V. Quantity in stock updated on 24/12/2024, 00:25.

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Delivery in 2-3 days, with postal tracking!