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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V - YTAF630

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V - YTAF630
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.44$ 1.44$
5 - 9 1.36$ 1.36$
10 - 24 1.32$ 1.32$
25 - 49 1.29$ 1.29$
50 - 99 1.26$ 1.26$
100 - 249 1.22$ 1.22$
250 - 596 1.18$ 1.18$
Quantity U.P
1 - 4 1.44$ 1.44$
5 - 9 1.36$ 1.36$
10 - 24 1.32$ 1.32$
25 - 49 1.29$ 1.29$
50 - 99 1.26$ 1.26$
100 - 249 1.22$ 1.22$
250 - 596 1.18$ 1.18$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 596
Set of 1

N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V - YTAF630. N-channel transistor, 10A, 10A, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=25°C): 10A. Idss (max): 10A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Technology: Advanced Power MOSFET. Original product from manufacturer Toshiba. Quantity in stock updated on 05/06/2025, 22:25.

Equivalent products :

Quantity in stock : 396
IRFS630A

IRFS630A

N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID ...
IRFS630A
N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
IRFS630A
N-channel transistor, 4.1A, 6.5A, 100uA, 0.4 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.1A. ID (T=25°C): 6.5A. Idss (max): 100uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. C(in): 500pF. Cost): 95pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 137 ns. Type of transistor: MOSFET. Function: Advanced Power MOSFET. G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 13 ns. Technology: Advanced Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
1.25$ VAT incl.
(1.25$ excl. VAT)
1.25$

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