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Electronic components and equipment, for businesses and individuals

TK7P60W

TK7P60W
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 3.37$ 3.37$
5 - 9 3.20$ 3.20$
10 - 24 3.04$ 3.04$
25 - 49 2.87$ 2.87$
50 - 99 2.80$ 2.80$
100 - 249 2.73$ 2.73$
250 - 1891 2.63$ 2.63$
Quantity U.P
1 - 4 3.37$ 3.37$
5 - 9 3.20$ 3.20$
10 - 24 3.04$ 3.04$
25 - 49 2.87$ 2.87$
50 - 99 2.80$ 2.80$
100 - 249 2.73$ 2.73$
250 - 1891 2.63$ 2.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1891
Set of 1

TK7P60W. C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. Id(imp): 28A. ID (T=25°C): 7A. Idss (max): 10uA. Marking on the case: TK7P60W. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.50 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 24/12/2024, 01:25.

Equivalent products :

Quantity in stock : 66
STD10NM60N

STD10NM60N

C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Fu...
STD10NM60N
C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STD10NM60N
C(in): 540pF. Cost): 44pF. Channel type: N. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 10NM60N. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.53 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 32 ns. Td(on): 10 ns. Technology: Cool Mos POWER transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.33$ VAT incl.
(2.33$ excl. VAT)
2.33$

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