TT2062

TT2062. Semiconductor material: silicon. FT: kHz. Function: High-Speed.. Max hFE gain: 15. Minimum hFE gain: 4. Collector current: 18A. Ic(pulse): 35A. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Tf(max): 0.2us. Housing (according to data sheet): TO-3PMLH. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Housing: TO-3PF (SOT399, 2-16E3A). Spec info: Ultrahigh-Hor. Deflection CRT Display. CE diode: yes. Quantity in stock updated on 24/12/2024, 01:25.