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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 12.6A, 20A, 10uA, 0.25 Ohms, TO-220, TO-220AB, 600V - STP20NM60

N-channel transistor, 12.6A, 20A, 10uA, 0.25 Ohms, TO-220, TO-220AB, 600V - STP20NM60
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Quantity excl. VAT VAT incl.
1 - 1 7.18$ 7.18$
2 - 2 6.82$ 6.82$
3 - 4 6.61$ 6.61$
5 - 9 6.46$ 6.46$
10 - 19 6.32$ 6.32$
20 - 29 6.10$ 6.10$
30+ 5.89$ 5.89$
Quantity U.P
1 - 1 7.18$ 7.18$
2 - 2 6.82$ 6.82$
3 - 4 6.61$ 6.61$
5 - 9 6.46$ 6.46$
10 - 19 6.32$ 6.32$
20 - 29 6.10$ 6.10$
30+ 5.89$ 5.89$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 12.6A, 20A, 10uA, 0.25 Ohms, TO-220, TO-220AB, 600V - STP20NM60. N-channel transistor, 12.6A, 20A, 10uA, 0.25 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1500pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. RoHS: yes. Spec info: ID pulse 80A, HIGH dv/dt. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 25 ns. Technology: MDmesh Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 17/06/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
STP20NM60FD

STP20NM60FD

N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID ...
STP20NM60FD
N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 500pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FD. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. RoHS: yes. Spec info: ID pulse 80A, HIGH dv/dt. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
STP20NM60FD
N-channel transistor, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 500pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Function: Low Gate Capacitance. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: P20NM60FD. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. RoHS: yes. Spec info: ID pulse 80A, HIGH dv/dt. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
6.77$ VAT incl.
(6.77$ excl. VAT)
6.77$
Quantity in stock : 55
SPP20N60C3

SPP20N60C3

N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1...
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V
Set of 1
7.19$ VAT incl.
(7.19$ excl. VAT)
7.19$
Quantity in stock : 98
SPP20N60S5

SPP20N60S5

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25...
SPP20N60S5
N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. RoHS: yes. C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 40A. IDss (min): 0.5uA. Marking on the case: 20N60S5. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V
SPP20N60S5
N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. RoHS: yes. C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 40A. IDss (min): 0.5uA. Marking on the case: 20N60S5. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V
Set of 1
7.74$ VAT incl.
(7.74$ excl. VAT)
7.74$

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