STP20NM60FD

Quantity	excl. VAT	VAT incl.
1 - 1	6.77$	6.77$
2 - 2	6.43$	6.43$
3 - 4	6.09$	6.09$
5 - 9	5.75$	5.75$
10 - 19	5.62$	5.62$
20 - 29	5.48$	5.48$
30 - 43	5.28$	5.28$

Quantity	U.P
1 - 1	6.77$	6.77$
2 - 2	6.43$	6.43$
3 - 4	6.09$	6.09$
5 - 9	5.75$	5.75$
10 - 19	5.62$	5.62$
20 - 29	5.48$	5.48$
30 - 43	5.28$	5.28$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 43

Set of 1

STP20NM60FD. C(in): 1300pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Id(imp): 80A. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P20NM60FD. Temperature: +150°C. Pd (Power Dissipation, Max): 192W. On-resistance Rds On: 0.26 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Function: Low Gate Capacitance. Spec info: ID pulse 80A, HIGH dv/dt. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.

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Delivery in 2-3 days, with postal tracking!