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Semiconductors Diodes Standard and Rectifier Diodes

RGP15J

RGP15J
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.73$ 0.73$
5 - 9 0.69$ 0.69$
10 - 24 0.65$ 0.65$
25 - 49 0.62$ 0.62$
50 - 99 0.60$ 0.60$
Quantity U.P
1 - 4 0.73$ 0.73$
5 - 9 0.69$ 0.69$
10 - 24 0.65$ 0.65$
25 - 49 0.62$ 0.62$
50 - 99 0.60$ 0.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 99
Set of 1

RGP15J. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 600V. Quantity in stock updated on 24/12/2024, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 57
RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 41
RGP15M

RGP15M

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 266
FR155

FR155

Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals:...
FR155
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V
FR155
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 27
FR157

FR157

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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Quantity in stock : 415832
1N4007

1N4007

VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
1N4007
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FJP13009

FJP13009

Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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FJP13009H2

FJP13009H2

Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
FJP13009H2
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Quantity in stock : 47909
1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
1N4148
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0.0164$ VAT incl.
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Quantity in stock : 812
1N5908

1N5908

Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Po...
1N5908
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Quantity in stock : 24551
1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
1N5408
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Quantity in stock : 995
1N5399

1N5399

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
1N5399
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Quantity in stock : 8
STF3NK80Z

STF3NK80Z

C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Fu...
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Quantity in stock : 3667
TIP122

TIP122

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
TIP122
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TIP122
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0.71$
Quantity in stock : 2377
FR207

FR207

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR207
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0.25$ VAT incl.
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0.25$

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