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RGP15G

RGP15G
Quantity excl. VAT VAT incl.
1 - 9 0.59$ 0.59$
10 - 18 0.53$ 0.53$
Quantity U.P
1 - 9 0.59$ 0.59$
10 - 18 0.53$ 0.53$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 18
Set of 1

RGP15G. Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 400V. Quantity in stock updated on 26/12/2024, 03:25.

Equivalent products :

Quantity in stock : 57
RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
RGP30M
Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 1000V. Note: GI, S
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 41
RGP15M

RGP15M

Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installatio...
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
RGP15M
Semiconductor material: silicon. Note: High-speed switching. Note: 50App/8.3ms. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AC. VRRM: 1000V
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 27
FR157

FR157

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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FJP13009

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1N5908

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STF3NK80Z

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