Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.95$ | 0.95$ |
5 - 9 | 0.90$ | 0.90$ |
10 - 24 | 0.87$ | 0.87$ |
25 - 49 | 0.85$ | 0.85$ |
50 - 99 | 0.84$ | 0.84$ |
100 - 249 | 0.81$ | 0.81$ |
250 - 593 | 0.78$ | 0.78$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.95$ | 0.95$ |
5 - 9 | 0.90$ | 0.90$ |
10 - 24 | 0.87$ | 0.87$ |
25 - 49 | 0.85$ | 0.85$ |
50 - 99 | 0.84$ | 0.84$ |
100 - 249 | 0.81$ | 0.81$ |
250 - 593 | 0.78$ | 0.78$ |
NPN-Transistor, 2A, TO-220, TO-220AB, 150V - 2SB861. NPN-Transistor, 2A, TO-220, TO-220AB, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Resistor B: 10. BE diode: no. BE resistor: 47. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: PNP transistor. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: complementary transistor (pair) 2SD1138. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V. Saturation voltage VCE(sat): 3V. Original product from manufacturer Hitachi. Quantity in stock updated on 07/06/2025, 08:25.
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