PNP bipolar transistors

NPN-Transistor, 140mA, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 140mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Fast Switching Speed. Max hFE gain: 400. Minimum hFE gain: 100. Marking on the case: A1209. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2911

NPN-Transistor, 2A, SOT-89, 2-5K1A, 50V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): 2-5K1A. Collector/emitter voltage Vceo: 50V. Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: NY. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: screen printing / SMD code NY. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, D3/B, 30V/20V, 30mA. Housing: PCB soldering. Housing: D3/B. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, 10A, TO-3P ( TO3P ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO3P ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI, NF-E. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3182. BE diode: no. CE diode: no

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), 230V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3263

NPN-Transistor, 15A, TO-3PN ( 2-16C1B ), MT-100, 230V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): MT-100. Collector/emitter voltage Vceo: 230V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: HI-FI Audio. Max hFE gain: 140. Minimum hFE gain: 50. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Tf(max): 1.5us. Tf(min): 0.35us. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3263. BE diode: no. CE diode: no

NPN-Transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SC3264. Type of transistor: PNP

NPN-Transistor, 12A, TO-247, TO-247, 160V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3280

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3281

NPN-Transistor, 14A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 14A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3284. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, TO-220, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3298. BE diode: no. CE diode: no

NPN-Transistor, 5A, TO-220FP, TO-220F, 60V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: Io-sat. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3299

NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V. Collector current: 1A. Housing: TO-126F. Housing (according to data sheet): TO-126F (2-8A1H). Collector/emitter voltage Vceo: 120V. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3421Y. BE diode: no. CE diode: no

NPN-Transistor, 0.05A, 2-8H1A, 150V, TO-126 (TO-225, SOT-32). Collector current: 0.05A. Housing (according to data sheet): 2-8H1A. Collector/emitter voltage Vceo: 150V. Housing: TO-126 (TO-225, SOT-32). Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 80. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3423. BE diode: no. CE diode: no

NPN-Transistor, 100mA, TO-92, TO-92M ( 9mm ), 200V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. C(in): 1.7pF. Cost): 2.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 320. Minimum hFE gain: 40. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Function: video. BE diode: no. CE diode: no

NPN-Transistor, 15A, TO-3P ( TO3P ), MT-100(TO3P), 180V. Collector current: 15A. Housing: TO-3P ( TO3P ). Housing (according to data sheet): MT-100(TO3P). Collector/emitter voltage Vceo: 180V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Marking on the case: A1386A. Pd (Power Dissipation, Max): 130W. Weight: 6g. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 180V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3519A. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-92, 60V/50V, 200mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 60V/50V. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, PCB soldering, TO-92, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, PCB soldering, TO-92, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, PCB soldering, TO-92, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, PCB soldering, TO-92, 50V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, 5A, 35V. Collector current: 5A. Collector/emitter voltage Vceo: 35V. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: general purpose. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-92, 30V/25V, 300mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 30V/25V. Collector current Ic [A], max.: 300mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.6W

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 180V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Marking on the case: A1492. Number of terminals: 3. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3856

NPN-Transistor, 0.2A, TO-126F, TO-126F, 120V. Collector current: 0.2A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: Hi-def, Cre=2.2pF. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3953