PNP bipolar transistors

NPN-Transistor, 15A, TO-220, TO-220, 80V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 5 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 90V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6488

NPN-Transistor, TO-92, 0.5A, TO-92, 350V. Housing: TO-92. Collector current: 0.5A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Resistor B: Power Transistor. BE resistor: -350V. C(in): 100pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 200. Minimum hFE gain: 15. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6517. BE diode: no. CE diode: no

NPN-Transistor, 5A, TO-220, TO-220, 60V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: S-L, Low-sat. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC2562

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Marking on the case: A1013-Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.6V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no

NPN-Transistor, 0.15A, TO-92, TO-92, 2-5F1B, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92, 2-5F1B. Collector/emitter voltage Vceo: 50V. Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: audio amplifier. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC1162. BE diode: no. CE diode: no

NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE.120-240. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: 1015 Y. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC1815Y. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, RM-60, 120V, 12A. Housing: PCB soldering. Housing: RM-60. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 12A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 120W

NPN-Transistor, 10A, 140V. Collector current: 10A. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 100W. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC2581

NPN-Transistor, PCB soldering, TO-3, 200V, 17A. Housing: PCB soldering. Housing: TO-3. Collector-emitter voltage Uceo [V]: 200V. Collector current Ic [A], max.: 17A. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 200W. Manufacturer's marking: silicon. Cutoff frequency ft [MHz]: 17A. Operating temperature range min (°C): PNP. Operating temperature range max (°C): 200V

NPN-Transistor, PCB soldering, TO-126, SOT-32, 35V, 5A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 5A. RoHS: no. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SA1120. Cutoff frequency ft [MHz]: 170 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 50mA, TO-92, TO-92, 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 220. Minimum hFE gain: 130. Ic(pulse): 100mA. Marking on the case: A1123. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planer type'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, 60V/55V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 60V/55V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.4W

NPN-Transistor, 10A, SOT-199, SOT-199, 115V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 200. Minimum hFE gain: 40. Ic(pulse): 15A. Marking on the case: A1141. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Saturation voltage VCE(sat): 0.6V

NPN-Transistor, 0.1A, 180V. Collector current: 0.1A. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 8W. Type of transistor: PNP

NPN-Transistor, 0.05A, 150V. Collector current: 0.05A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP

NPN-Transistor, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: audio amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Note: 9mm. Marking on the case: A1145 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC2705. BE diode: no. CE diode: no

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: VCE(sat) 2V max. Max hFE gain: 240. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 140V. Saturation voltage VCE(sat): 2V. Spec info: complementary transistor (pair) 2SC2706

NPN-Transistor, PCB soldering, TO-92, 35V/30V, 100mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 35V/30V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Resistor B: 47. BE resistor: 47. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, D6/C, 30V/20V, 30mA. Housing: PCB soldering. Housing: D6/C. Collector-emitter voltage Uceo [V]: 30V/20V. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.15W

NPN-Transistor, PCB soldering, TO-236, 55V/50V, 150mA. Housing: PCB soldering. Housing: TO-236. Collector-emitter voltage Uceo [V]: 55V/50V. Collector current Ic [A], max.: 150mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.2W

NPN-Transistor, 0.05A, 80V. Collector current: 0.05A. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-89, 150V, 50mA. Housing: PCB soldering (SMD). Housing: SOT-89. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Maximum dissipation Ptot [W]: 0.5W

NPN-Transistor, 0.07A, TO-92, SANYO--MP, 160V. Collector current: 0.07A. Housing: TO-92. Housing (according to data sheet): SANYO--MP. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High-Voltage Switching. Ic(pulse): 0.14A. Note: 9mm height. Pd (Power Dissipation, Max): 0.9W. Type of transistor: PNP. Vcbo: 180V. Saturation voltage VCE(sat): 0.14V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2910