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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 1.5A, TO-220, TO-220, 160V - 2SA1306

NPN-Transistor, 1.5A, TO-220, TO-220, 160V - 2SA1306
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.95$ 3.95$
5 - 9 3.76$ 3.76$
10 - 13 3.56$ 3.56$
Quantity U.P
1 - 4 3.95$ 3.95$
5 - 9 3.76$ 3.76$
10 - 13 3.56$ 3.56$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

NPN-Transistor, 1.5A, TO-220, TO-220, 160V - 2SA1306. NPN-Transistor, 1.5A, TO-220, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3298. BE diode: no. CE diode: no. Quantity in stock updated on 15/04/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 116
2SB649A

2SB649A

NPN-Transistor, 1.5A, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (accor...
2SB649A
NPN-Transistor, 1.5A, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Housing: TO-126 (TO-225, SOT-32). Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. BE diode: no. CE diode: no
2SB649A
NPN-Transistor, 1.5A, TO-126, 160V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Housing: TO-126 (TO-225, SOT-32). Cost): 27pF. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 180V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2SD669A. BE diode: no. CE diode: no
Set of 1
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$

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