NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V - 2SA1358Y

Quantity	excl. VAT	VAT incl.
1 - 4	1.70$	1.70$
5 - 9	1.61$	1.61$
10 - 24	1.56$	1.56$
25 - 49	1.53$	1.53$
50 - 65	1.38$	1.38$

Quantity	U.P
1 - 4	1.70$	1.70$
5 - 9	1.61$	1.61$
10 - 24	1.56$	1.56$
25 - 49	1.53$	1.53$
50 - 65	1.38$	1.38$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 65

Set of 1

NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V - 2SA1358Y. NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V. Collector current: 1A. Housing: TO-126F. Housing (according to data sheet): TO-126F (2-8A1H). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. Spec info: complementary transistor (pair) 2SC3421Y. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 02/06/2025, 11:25.

Technical documentation

NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V - 2SA1358Y

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