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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 6.68$ 6.68$
2 - 2 6.35$ 6.35$
3 - 4 6.01$ 6.01$
5 - 9 5.68$ 5.68$
10 - 19 5.54$ 5.54$
20 - 29 5.41$ 5.41$
30 - 82 5.21$ 5.21$
Quantity U.P
1 - 1 6.68$ 6.68$
2 - 2 6.35$ 6.35$
3 - 4 6.01$ 6.01$
5 - 9 5.68$ 5.68$
10 - 19 5.54$ 5.54$
20 - 29 5.41$ 5.41$
30 - 82 5.21$ 5.21$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 82
Set of 1

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW0281G. NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 4.5pF. Cost): 10pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW0281. BE diode: no. CE diode: no. Quantity in stock updated on 16/04/2025, 20:25.

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
8.71$ VAT incl.
(8.71$ excl. VAT)
8.71$
Quantity in stock : 34
NJW1302

NJW1302

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( ...
NJW1302
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW3281. BE diode: no. CE diode: no
NJW1302
NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW3281. BE diode: no. CE diode: no
Set of 1
8.04$ VAT incl.
(8.04$ excl. VAT)
8.04$
Quantity in stock : 26
2SC5359

2SC5359

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
2SC5359
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SA1987. CE diode: yes
2SC5359
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) 2SA1987. CE diode: yes
Set of 1
9.79$ VAT incl.
(9.79$ excl. VAT)
9.79$
Quantity in stock : 13
MJL3281A

MJL3281A

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
12.03$ VAT incl.
(12.03$ excl. VAT)
12.03$
Quantity in stock : 30
NJW3281

NJW3281

NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( ...
NJW3281
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no
NJW3281
NPN transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no
Set of 1
8.04$ VAT incl.
(8.04$ excl. VAT)
8.04$

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