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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302
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Quantity excl. VAT VAT incl.
1 - 1 8.04$ 8.04$
2 - 2 7.64$ 7.64$
3 - 4 7.24$ 7.24$
5 - 9 6.84$ 6.84$
10 - 19 6.68$ 6.68$
20 - 29 6.52$ 6.52$
30 - 34 6.27$ 6.27$
Quantity U.P
1 - 1 8.04$ 8.04$
2 - 2 7.64$ 7.64$
3 - 4 7.24$ 7.24$
5 - 9 6.84$ 6.84$
10 - 19 6.68$ 6.68$
20 - 29 6.52$ 6.52$
30 - 34 6.27$ 6.27$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 34
Set of 1

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V - NJW1302. NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Spec info: complementary transistor (pair) NJW3281. BE diode: no. CE diode: no. Quantity in stock updated on 16/04/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
8.71$ VAT incl.
(8.71$ excl. VAT)
8.71$
Quantity in stock : 53
MJW1302AG

MJW1302AG

NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (accordi...
MJW1302AG
NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
MJW1302AG
NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
Set of 1
8.13$ VAT incl.
(8.13$ excl. VAT)
8.13$

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