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Semiconductors Transistors

NJW3281

NJW3281
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Quantity excl. VAT VAT incl.
1 - 1 8.04$ 8.04$
2 - 2 7.64$ 7.64$
3 - 4 7.24$ 7.24$
5 - 9 6.84$ 6.84$
10 - 19 6.68$ 6.68$
20 - 29 6.52$ 6.52$
30 - 51 6.27$ 6.27$
Quantity U.P
1 - 1 8.04$ 8.04$
2 - 2 7.64$ 7.64$
3 - 4 7.24$ 7.24$
5 - 9 6.84$ 6.84$
10 - 19 6.68$ 6.68$
20 - 29 6.52$ 6.52$
30 - 51 6.27$ 6.27$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 51
Set of 1

NJW3281. C(in): 9pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: audio power amplifier. Production date: 201452 201512. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) NJW1302. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.

Technical documentation

Equivalent products :

Quantity in stock : 13
MJL3281A

MJL3281A

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar P...
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
12.03$ VAT incl.
(12.03$ excl. VAT)
12.03$
Quantity in stock : 55
MJW3281AG

MJW3281AG

Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complemen...
MJW3281AG
Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
MJW3281AG
Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
Set of 1
5.30$ VAT incl.
(5.30$ excl. VAT)
5.30$

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2SC2705

2SC2705

Cost): 1.8pF. Darlington transistor?: no. Semiconductor material: silicon. FT: 200 MHz. Function: au...
2SC2705
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2SC3284

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Semiconductor material: silicon. FT: 60 MHz. Collector current: 14A. Pd (Power Dissipation, Max): 12...
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MJE15033G

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RoHS: yes. Housing: TO-220. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220. Cost): 2pF. ...
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2SC2238

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Semiconductor material: silicon. FT: 100 MHz. Collector current: 1.5A. Pd (Power Dissipation, Max): ...
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2SC4468

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Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Collector current: 10A. Pd (Power...
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Quantity in stock : 286
2SA1943

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IRF540

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2SC1841

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Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general ...
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