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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE350

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE350
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.51$ 0.51$
25 - 49 0.49$ 0.49$
50 - 99 0.47$ 0.47$
100 - 249 0.47$ 0.47$
250 - 594 0.62$ 0.62$
Quantity U.P
1 - 4 0.57$ 0.57$
5 - 9 0.54$ 0.54$
10 - 24 0.51$ 0.51$
25 - 49 0.49$ 0.49$
50 - 99 0.47$ 0.47$
100 - 249 0.47$ 0.47$
250 - 594 0.62$ 0.62$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 594
Set of 1

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126, TO-126, 300V, TO-126 (TO-225, SOT-32) - MJE350. NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Number of terminals: 3. Manufacturer's marking: MJE350. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Power: 20.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Quantity in stock updated on 19/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 145
MJE350-ONS

MJE350-ONS

NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (accor...
MJE350-ONS
NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no
MJE350-ONS
NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no
Set of 1
0.97$ VAT incl.
(0.97$ excl. VAT)
0.97$

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