NPN bipolar transistors

NPN transistor, 8A, TO-220FP, TO-220F, 700V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 7. Minimum hFE gain: 4. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.6us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1V. Vebo: 13.5V

NPN transistor, 8A, 150V. Collector current: 8A. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 330V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3 ( TO-204 ), TO-3, 700V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. BE diode: no. CE diode: no

NPN transistor, 12A, 350V. Collector current: 12A. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 700V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-247, TO-247FP, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247FP. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. BE diode: no. CE diode: no

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. RoHS: yes. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-247, TO-247, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: 33 Ohms

NPN transistor, 9A, TO-247, TO-247FP, 800V. Collector current: 9A. Housing: TO-247. Housing (according to data sheet): TO-247FP. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 9A, TO-3PF ( SOT399 ), 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 9A. Housing (according to data sheet): TO-3PF ( SOT399 ). Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 5.0V. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Spec info: suitable for powering SONY TVs

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 13. Minimum hFE gain: 5. Ic(pulse): 25A. Note: Insulation voltage 2500V. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.5us. Tf(min): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V. Function: High-voltage, high-speed switching. Spec info: Switching times (16kHz line deflection circuit)

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. FT: kHz. Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 25A. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.22us. Tf(min): 0.16us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V. Number of terminals: 3. Quantity per case: 1. Spec info: MONITOR. Function: TV-HA, hi-res (F)

NPN transistor, 10A, SOT-399, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. FT: 64kHz. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 25A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Transistor. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V. Number of terminals: 3. Function: Monitor TV-HA, hi-res, Visol--2500V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 12A, SOT-199, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1. Spec info: (F)

NPN transistor, 12A, TO-247, TO-247, 800V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1

NPN transistor, 12A, TO-3P(H)IS, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): TO-3P(H)IS. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 145pF. Semiconductor material: silicon. Function: CTV-HA Hi-re. Ic(pulse): 30A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 1.1V. Quantity per case: 1. BE diode: no. CE diode: yes

NPN transistor, 12A, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1. Spec info: SOT199 (F)

NPN transistor, 12A, 800V. Collector current: 12A. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. RoHS: yes. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1. Spec info: SOT399 (F)

NPN transistor, 12A, SOT-399, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1

NPN transistor, 12A, SOT-399, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 12A. Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 16A, 800V. Collector current: 16A. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Function: monitor. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 1500V. Quantity per case: 1. Spec info: 1.4...1.8us

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Type of transistor: NPN. Vcbo: 1700V. Quantity per case: 1. Spec info: Ts 4.8us, Tf 0.4us