NPN bipolar transistors

NPN transistor, 0.5A, 250V. Collector current: 0.5A. Collector/emitter voltage Vceo: 250V. Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.5A, 300V. Collector current: 0.5A. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 0.05A, 400V. Collector current: 0.05A. Collector/emitter voltage Vceo: 400V. Semiconductor material: silicon. FT: 70 MHz. Pd (Power Dissipation, Max): 0.83W. Type of transistor: NPN. Quantity per case: 1. Spec info: TO-93

NPN transistor, PCB soldering (SMD), SOT-89, 50mA. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 50mA. RoHS: no. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DA. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

NPN transistor, 0.5A, 300V. Collector current: 0.5A. Collector/emitter voltage Vceo: 300V. Semiconductor material: silicon. FT: 45 MHz. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 25mA, 15V. Collector current: 25mA. Collector/emitter voltage Vceo: 15V. Semiconductor material: silicon. Function: UHF-V M/O. Pd (Power Dissipation, Max): 0.36W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 50mA, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. Darlington transistor?: no. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100mA. Marking on the case: 1V. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 0.6V. Quantity per case: 1. Spec info: screen printing/SMD code

NPN transistor, PCB soldering, TO-202, 100mA. Housing: PCB soldering. Housing: TO-202. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 160V. Maximum dissipation Ptot [W]: 1.8W

NPN transistor, 50mA, 275V. Collector current: 50mA. Collector/emitter voltage Vceo: 275V. Semiconductor material: silicon. FT: 90MHz. Id(imp): 300mA. Pd (Power Dissipation, Max): 7W. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Vebo: 5V. Quantity per case: 1

NPN transistor, 100mA, TO-92, TO-92, 20V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. Semiconductor material: silicon. FT: 700 MHz. Function: VHF TV-IF. Max hFE gain: 40. Minimum hFE gain: 35. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 1V. Vebo: 3V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 150mA, SOT-223 ( TO-226 ), SOT-223, 15V. Collector current: 150mA. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 15V. Semiconductor material: silicon. FT: 7GHz. Function: VHF/UHF-A 7GHz wideband transistor. Max hFE gain: 130. Minimum hFE gain: 80. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 25V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 200mA, SOT-223 ( TO-226 ), SOT-223, 15V. Collector current: 200mA. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 15V. Cost): 0.7pF. Semiconductor material: silicon. FT: 7GHz. Function: For VHF/UHF antenna amplifier and RF communication applications. Max hFE gain: 250. Minimum hFE gain: 60. Temperature: +150°C. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 20V. Vebo: 3V. Number of terminals: 4. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 50mA, SOT-143, SOT-143B, 10V. Collector current: 50mA. Housing: SOT-143. Housing (according to data sheet): SOT-143B. Collector/emitter voltage Vceo: 10V. C(in): 1.3pF. Cost): 0.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 100. Minimum hFE gain: 60. Marking on the case: V3%. Pd (Power Dissipation, Max): 300mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 20V. Vebo: 2.5V. Number of terminals: 4. Spec info: screen printing/CMS code V3. BE diode: no. CE diode: no

NPN transistor, 50mA, SOT-143, SOT-143B, 10V. Collector current: 50mA. Housing: SOT-143. Housing (according to data sheet): SOT-143B. Collector/emitter voltage Vceo: 10V. C(in): 1.3pF. Cost): 0.7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 100. Minimum hFE gain: 60. Marking on the case: %MW. Pd (Power Dissipation, Max): 300mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 20V. Vebo: 2.5V. Number of terminals: 4. Spec info: screen printing/SMD code MW. BE diode: no. CE diode: no

NPN transistor, 0.1A, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.1A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 60 MHz. Function: VID-L. Pd (Power Dissipation, Max): 1.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 300V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 80mA, SOT-143, SOT-143, 12V. Collector current: 80mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Collector/emitter voltage Vceo: 12V. C(in): 0.9pF. Cost): 0.28pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: RCs. Pd (Power Dissipation, Max): 580mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Vebo: 2V. Number of terminals: 4. Spec info: screen printing/SMD code RCs. BE diode: no. CE diode: no

NPN transistor, 0.3A, 100V. Collector current: 0.3A. Collector/emitter voltage Vceo: 100V. Semiconductor material: silicon. Function: 'Hi-res'. Pd (Power Dissipation, Max): 3W. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) BFQ252. Note: Tc.=115°C

NPN transistor, 0.15A, 25V. Collector current: 0.15A. Collector/emitter voltage Vceo: 25V. Semiconductor material: silicon. Function: UHF-A. Type of transistor: NPN. Quantity per case: 1

NPN transistor, 1.25A, 36V. Collector current: 1.25A. Collector/emitter voltage Vceo: 36V. Semiconductor material: silicon. FT: 175 MHz. Pd (Power Dissipation, Max): 4W. Type of transistor: NPN. Quantity per case: 1

NPN transistor, PCB soldering (SMD), SOT-23, 210mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 210mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: R7s. Collector-emitter voltage Uceo [V]: 15V. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

NPN transistor, 0.045A, SOT-23 ( TO-236 ), SOT-23, 20V. Collector current: 0.045A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 20V. C(in): 0.64pF. Cost): 0.23pF. Semiconductor material: silicon. FT: 5GHz. Function: 5GHz wideband transistor (UHF-A). Max hFE gain: 140. Minimum hFE gain: 70. Pd (Power Dissipation, Max): 0.28W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 15V. Vebo: 2.5V. Quantity per case: 1. BE diode: no. CE diode: no

NPN transistor, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 15V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 15V. C(in): 1.2pF. Cost): 0.6pF. Conditioning: roll. Semiconductor material: silicon. FT: 5GHz. Function: 5GHz wideband transistor (UHF-A). Max hFE gain: 135. Minimum hFE gain: 65. Marking on the case: P2p. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 20V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code P2P. Conditioning unit: 3000. BE diode: no. CE diode: no

NPN transistor, PCB soldering (SMD), SOT-23, 25mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 25mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P2. Collector-emitter voltage Uceo [V]: 15V. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 45mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 45mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: GFs. Collector-emitter voltage Uceo [V]: 15V. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.28W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

NPN transistor, 35mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 35mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Conditioning: roll. Semiconductor material: silicon. FT: 6GHz. Function: UHF-A, RF wideband amplifiers and oscillators.. Max hFE gain: 90. Minimum hFE gain: 40. Marking on the case: R2. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 15V. Vebo: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 3000. Spec info: SMD R2. BE diode: no. CE diode: no