NPN bipolar transistors

NPN transistor, 8A, TO-247, TO-247, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: 33 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 9A, TO-247, TO-247FP, 800V. Collector current: 9A. Housing: TO-247. Housing (according to data sheet): TO-247FP. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 9A, TO-3PF (SOT399, 2-16E3A), TO-3PF ( SOT399 ), 800V. Collector current: 9A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF ( SOT399 ). Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 5.0V. Spec info: suitable for powering SONY TVs. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-voltage, high-speed switching. Max hFE gain: 13. Minimum hFE gain: 5. Ic(pulse): 25A. Note: Insulation voltage 2500V. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Spec info: Switching times (16kHz line deflection circuit). Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.5us. Tf(min): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: TV-HA, hi-res (F). Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 25A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Tf(max): 0.22us. Tf(min): 0.16us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: Monitor TV-HA, hi-res, Visol--2500V. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Transistor. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 12A, SOT-199, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Spec info: (F). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-247, TO-247, 800V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), TO-3P(H)IS, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P(H)IS. Collector/emitter voltage Vceo: 800V. BE diode: no. Cost): 145pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Ic(pulse): 30A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Maximum saturation voltage VCE(sat): 1.1V

NPN transistor, 12A, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. Spec info: SOT199 (F). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, 800V. Collector current: 12A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: SOT399 (F). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CRT-HA hi-re (F). Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 16A, 800V. Collector current: 16A. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: monitor. Pd (Power Dissipation, Max): 125W. Spec info: 1.4...1.8us. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Spec info: Ts 4.8us, Tf 0.4us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 8A, 825V. Collector current: 8A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Spec info: 4.8us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 10A, 825V. Collector current: 10A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Note: MONITOR. Pd (Power Dissipation, Max): 45W. Spec info: 7.4us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, 12A, 1700V. Collector current: 12A. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. Function: Power Transistor. Note: MONITOR 16KHz. Spec info: Rbe 70 Ohms, SOT199 (TO-247F). Type of transistor: NPN

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 1700V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 1700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: MONITOR 16KHz. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.3us. Tf(min): 0.14us. Type of transistor: NPN. Saturation voltage VCE(sat): 1V. Vebo: 7.5V

NPN transistor, 12A, 825V. Collector current: 12A. Collector/emitter voltage Vceo: 825V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Note: MONITOR. Pd (Power Dissipation, Max): 45W. Spec info: 2.5us. Type of transistor: NPN. Vcbo: 1700V

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 160V/100V. Maximum dissipation Ptot [W]: 25W

NPN transistor, PCB soldering, TO-3, 6A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 6A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 280V/150V. Maximum dissipation Ptot [W]: 25W

NPN transistor, 600V, 10A, TO-3. Collector-Emitter Voltage VCEO: 600V. Collector current: 10A. Housing: TO-3. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Power: 175W. Max frequency: 10MHz. DC Collector/Base Gain hFE min.: 150