NPN bipolar transistors

NPN transistor, 100mA, SOT-37 ( TO-50 ), SOT-37 ( TO-50 ), 15V. Collector current: 100mA. Housing: SOT-37 ( TO-50 ). Housing (according to data sheet): SOT-37 ( TO-50 ). Collector/emitter voltage Vceo: 15V. Semiconductor material: silicon. FT: 5GHz. Function: RF amp up to GHz range for antenna amplifier.. Max hFE gain: 150. Minimum hFE gain: 25. Temperature: +150°C. Pd (Power Dissipation, Max): 700W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Planar RF Transistor'. Type of transistor: NPN. Vcbo: 20V. Vebo: 2.5V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 15V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 15V. Semiconductor material: silicon. FT: 2.8GHz. Function: VHF-UHF 3GHz wideband transistor. Max hFE gain: 90. Minimum hFE gain: 25. Ic(pulse): 50mA. Marking on the case: E2. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 25V. Vebo: 2.5V. Number of terminals: 3. Quantity per case: 1

NPN transistor, 25mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 25mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Semiconductor material: silicon. FT: 450 MHz. Function: 'IF and VHF thick and thin-film circuit'. Max hFE gain: 140. Minimum hFE gain: 40. Ic(pulse): 25mA. Marking on the case: G1*. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 30 v. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code G1p, G1t, G1W

NPN transistor, 0.2A, 30 v. Collector current: 0.2A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Function: UHF-A. Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-223, 200mA. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 200mA. RoHS: yes. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BFU590G. Collector-emitter voltage Uceo [V]: 24V. Cutoff frequency ft [MHz]: 8.5GHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency NPN transistor

NPN transistor, 0.1A, TO-92, TO-92, 140V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: High Voltage Transistor. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Spec info: complementary transistor (pair) BFV421

NPN transistor, 50mA, TO-72, TO-72, 10V. Collector current: 50mA. Housing: TO-72. Housing (according to data sheet): TO-72. Collector/emitter voltage Vceo: 10V. Quantity per case: 1. Semiconductor material: silicon. FT: 1.6GHz. Function: VHF-UHF-A. Max hFE gain: 25. Minimum hFE gain: 25. Ic(pulse): 100mA. Number of terminals: 4. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 20V. Vebo: 2.5V

NPN transistor, TO-50, 0.025A, TO-50-3, 25V. Housing: TO-50. Collector current: 0.025A. Housing (according to data sheet): TO-50-3. Collector/emitter voltage Vceo: 25V. Resistor B: no. BE diode: high frequency NPN transistor. BE resistor: PCB soldering (SMD). C(in): TO-50. CE diode: surface-mounted component (SMD). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Max hFE gain: 150. Minimum hFE gain: 20. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 25V. Saturation voltage VCE(sat): 0.1V. Spec info: 'Planar RF Transistor'

NPN transistor, 1A, 100V. Collector current: 1A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF/S. Note: b>70. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN

NPN transistor, 0.5A, TO-39 ( TO-205 ), 50V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/HF/S. Number of terminals: 3. Pd (Power Dissipation, Max): 0.75W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 75V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: NF/HF/S. Number of terminals: 3. Pd (Power Dissipation, Max): 0.75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.25A, 50V. Collector current: 1.25A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 860 MHz. Function: UHF-L. Pd (Power Dissipation, Max): 1.07W. Type of transistor: NPN

NPN transistor, 1A, 36V. Collector current: 1A. Collector/emitter voltage Vceo: 36V. Quantity per case: 1. Semiconductor material: silicon. FT: 470 MHz. Function: UHF-L. Pd (Power Dissipation, Max): 7.8W. Type of transistor: NPN

NPN transistor, 2A, 40V. Collector current: 2A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 860 MHz. Function: UHF-L. Pd (Power Dissipation, Max): 2W. Type of transistor: NPN

NPN transistor, SOT-223 ( TO-226 ), SOT-223. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Quantity per case: 1. Semiconductor material: silicon. Function: 'Smart High-Side Power Switch'. Equivalents: ISP452. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Spec info: miniPROFET. CE diode: yes

NPN transistor, PCB soldering (SMD), SOT-223, 500mA. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 500mA. RoHS: yes. Housing (JEDEC standard): TO-261AA. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AS3. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Max hFE gain: 300. Minimum hFE gain: 35. Marking on the case: U8. Pd (Power Dissipation, Max): 0.35W. Assembly/installation: surface-mounted component (SMD). Tf (type): 60 ns. Tr: 25 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 6V. Spec info: screen printing/CMS code U8. BE diode: no. CE diode: yes

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

NPN transistor, 1A, SOT-89, SOT89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 80V. C(in): 90pF. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Max hFE gain: 300. Minimum hFE gain: 35. Ic(pulse): 2A. Marking on the case: AR4. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Tf (type): 1000 ns. Tr: 250 ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: screen printing/SMD code AR4. BE diode: no. CE diode: no

NPN transistor, 1A, TO-92, TO-92 ( SOT-54 ), 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Tf(max): 1300 ns. Tf(min): 500 ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1.3V. Vebo: 5V. BE diode: no. CE diode: yes

NPN transistor, 250mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 250mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: general purpose. Max hFE gain: 120. Minimum hFE gain: 25. Marking on the case: B2. Number of terminals: 3. Pd (Power Dissipation, Max): 0.225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 18 ns. Tf(min): 12us. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Saturation voltage VCE(sat): 0.3V. Spec info: screen printing/SMD code B2

NPN transistor, 1A, 120V. Collector current: 1A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 5W. Type of transistor: NPN. Spec info: TO39

NPN transistor, 2.5A, 1500V. Collector current: 2.5A. Collector/emitter voltage Vceo: 1500V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. CE diode: yes

NPN transistor, 7A, 60V. Collector current: 7A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 130V