NPN bipolar transistors

NPN transistor, 7A, TO-220, TO-220, 200V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 6 MHz. Function: TV-HA. Max hFE gain: 20. Minimum hFE gain: 12. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, 7A, TO-220, 200V. Collector current: 7A. Housing: TO-220. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 400V

NPN transistor, PCB soldering, TO-3, 10A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 10A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 175V. Maximum dissipation Ptot [W]: 60W

NPN transistor, 12A, 375V. Collector current: 12A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, 12A, 400V. Collector current: 12A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 120W. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 6A, 375V. Collector current: 6A. Collector/emitter voltage Vceo: 375V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-SN. Pd (Power Dissipation, Max): 70W. Type of transistor: NPN. Vcbo: 800V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, SOT-199, SOT-199, 800V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, SOT-199, SOT-199, 800V. Collector current: 8A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA/Monitor. Max hFE gain: 7.3. Minimum hFE gain: 4.2. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: Rbe 25 Ohms. Assembly/installation: PCB through-hole mounting. Tf(max): 400 ns. Tf(min): 300 ns. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 13.5V

NPN transistor, 12A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV/Monitor. Pd (Power Dissipation, Max): 55W. Spec info: 'CTV-HA' (insulated). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 16A, SOT-430, SOT-430, 800V. Collector current: 16A. Housing: SOT-430. Housing (according to data sheet): SOT-430. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV/Monitor. Pd (Power Dissipation, Max): 125W. Spec info: CTV-HA. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 6A, 700V. Collector current: 6A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 2.5A, 700V. Collector current: 2.5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 2.5A, 700V. Collector current: 2.5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA SMPS. Note: Vce(sat) 1.0V, Vbe(sat) 1.3V. Pd (Power Dissipation, Max): 100W. Spec info: TO-220AB. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS (F). Pd (Power Dissipation, Max): 20W. Spec info: TO-220F (SOT186). Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, ITO-218, 8A. Housing: PCB soldering. Housing: ITO-218. Collector current Ic [A], max.: 8A. RoHS: no. Component family: high voltage NPN transistor. Housing (JEDEC standard): SOT-199. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU508AF. Collector-emitter voltage Uceo [V]: 700V. Maximum dissipation Ptot [W]: 34W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 34W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 1500V, 8A, TO-247. Collector-Emitter Voltage VCEO: 1500V. Collector current: 8A. Housing: TO-247. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Power: 125W

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 34W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, PCB soldering, ISOWATT-218, 8A. Housing: PCB soldering. Housing: ISOWATT-218. Collector current Ic [A], max.: 8A. RoHS: no. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU508DFI. Collector-emitter voltage Uceo [V]: 700V. Cutoff frequency ft [MHz]: 7 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, 480V. Collector current: 8A. Collector/emitter voltage Vceo: 480V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-SN. Pd (Power Dissipation, Max): 62W. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, PCB soldering, TO-3, 7A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Maximum dissipation Ptot [W]: 90W

NPN transistor, PCB soldering, TO-3, 7A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 7A. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/ 200V. Maximum dissipation Ptot [W]: 90W