NPN bipolar transistors

NPN transistor, PCB soldering (SMD), SOT-23, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U8. Collector-emitter voltage Uceo [V]: 40V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 1A, SOT-89, SOT89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 80V. BE diode: no. C(in): 90pF. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Medium POWER, Solenoid, relay and actuator drivers & DC/DC modules. Max hFE gain: 300. Minimum hFE gain: 35. Ic(pulse): 2A. Marking on the case: AR4. Pd (Power Dissipation, Max): 1W. Spec info: screen printing/SMD code AR4. Assembly/installation: surface-mounted component (SMD). Tf (type): 1000 ns. Tr: 250 ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 90V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92 ( SOT-54 ), 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Tf(max): 1300 ns. Tf(min): 500 ns. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1.3V. Vebo: 5V

NPN transistor, 250mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 12V. Collector current: 250mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 12V. Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: general purpose. Max hFE gain: 120. Minimum hFE gain: 25. Marking on the case: B2. Number of terminals: 3. Pd (Power Dissipation, Max): 0.225mW. RoHS: yes. Spec info: screen printing/SMD code B2. Assembly/installation: surface-mounted component (SMD). Tf(max): 18 ns. Tf(min): 12us. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Saturation voltage VCE(sat): 0.3V

NPN transistor, 1A, 120V. Collector current: 1A. Collector/emitter voltage Vceo: 120V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 5W. Spec info: TO39. Type of transistor: NPN

NPN transistor, 2.5A, 1500V. Collector current: 2.5A. Collector/emitter voltage Vceo: 1500V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, 7A, 60V. Collector current: 7A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 130V

NPN transistor, 8A, TO-220FP, TO-220F, 700V. Collector current: 8A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 7. Minimum hFE gain: 4. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.6us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1V. Vebo: 13.5V

NPN transistor, 8A, 150V. Collector current: 8A. Collector/emitter voltage Vceo: 150V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 330V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 5A, TO-3 ( TO-204 ), TO-3, 700V. Collector current: 5A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, 350V. Collector current: 12A. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 700V

NPN transistor, 5A, 700V. Collector current: 5A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-247, TO-247FP, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247FP. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. RoHS: yes. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-247, TO-247, 700V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Pd (Power Dissipation, Max): 45W. RoHS: yes. Spec info: 33 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 9A, TO-247, TO-247FP, 800V. Collector current: 9A. Housing: TO-247. Housing (according to data sheet): TO-247FP. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 9A, TO-3PF (SOT399, 2-16E3A), TO-3PF ( SOT399 ), 800V. Collector current: 9A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF ( SOT399 ). Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: VCE(sat) 5.0V. Spec info: suitable for powering SONY TVs. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-voltage, high-speed switching. Max hFE gain: 13. Minimum hFE gain: 5. Ic(pulse): 25A. Note: Insulation voltage 2500V. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Spec info: Switching times (16kHz line deflection circuit). Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.5us. Tf(min): 0.35us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 10A, SOT-199, SOT-199, 800V. Collector current: 10A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: TV-HA, hi-res (F). Max hFE gain: 8. Minimum hFE gain: 5. Ic(pulse): 25A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Spec info: MONITOR. Assembly/installation: PCB through-hole mounting. Tf(max): 0.22us. Tf(min): 0.16us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), SOT-399, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): SOT-399. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 64kHz. Function: Monitor TV-HA, hi-res, Visol--2500V. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Transistor. Tf(max): 0.25us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 13.5V

NPN transistor, 12A, SOT-199, SOT-199, 800V. Collector current: 12A. Housing: SOT-199. Housing (according to data sheet): SOT-199. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Spec info: (F). Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 12A, TO-247, TO-247, 800V. Collector current: 12A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA Hi-re. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V