NPN bipolar transistors

NPN transistor, 8A, ISOWATT218, ISOWATT218, 700V. Collector current: 8A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Max hFE gain: 6. Minimum hFE gain: 4. Ic(pulse): 15A. Pd (Power Dissipation, Max): 60W. Spec info: MONITOR. Tf (type): 190 ns. Type of transistor: NPN. Vcbo: 1700V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 10V

NPN transistor, 10A, 700V. Collector current: 10A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: 'Hi-res'. Note: MONITOR. Pd (Power Dissipation, Max): 57W. Spec info: Ts 2.1/3.1us. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 4A, 400V. Collector current: 4A. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage, fast-switching. Max hFE gain: 32. Minimum hFE gain: 10. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: TO-220. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.5V

NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: high voltage fast switching, for switching power supplies. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 500V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Fast switching for switching power supplies. Max hFE gain: 14. Minimum hFE gain: 6. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Tf(max): 150us. Tf(min): 80us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220FP, TO-220F, 500V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 500V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: High-speed switching. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 800V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.1V. Vebo: 9V

NPN transistor, 4A, TO-220, TO-220, 450V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. Function: Fast commutation for switching mode power supply. Max hFE gain: 10. Minimum hFE gain: 4. Ic(pulse): 8A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: IFMS 8A, tp <5 ms. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 50 ns. Type of transistor: NPN. Vcbo: 850V. Saturation voltage VCE(sat): 0.13V. Vebo: 9V

NPN transistor, 7A, 450V. Collector current: 7A. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Pd (Power Dissipation, Max): 75W. Spec info: High-speed switching. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 5A, TO-220, TO220AB CASE 221A-09, 400V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: SMPS S-L. Max hFE gain: 34. Minimum hFE gain: 14. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: High-speed switching. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 9V

NPN transistor, PCB soldering, TO-220, 5A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUL45D2G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 13 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 5A, TO-220, TO220AB CASE 221A-09, 400V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 50pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Max hFE gain: 34. Minimum hFE gain: 22. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: Built-in Efficient Antisaturation Network. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.28V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 12V

NPN transistor, 4A, 500V. Collector current: 4A. Collector/emitter voltage Vceo: 500V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SMPS S-L. Pd (Power Dissipation, Max): 65W. Spec info: High-Speed. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 1.2A, TO-126F, TO-126F, 400V. Collector current: 1.2A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 5. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 600V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Vebo: 9V

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 5A, TO-220FP, TO-220F ( SOT186A ), 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V

NPN transistor, 5A, TO-220FP, TO-220F, 450V. Collector current: 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 32W. Spec info: Tf 170ns. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 10A, TO-220FP, TO-220F, 450V. Collector current: 10A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 23W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 6A, TO-220, TO-220, 450V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 110W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high voltage, high speed. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 8A, TO-220, TO-220, 450V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V

NPN transistor, 4A, 350V. Collector current: 4A. Collector/emitter voltage Vceo: 350V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Function: S-L, SN. Pd (Power Dissipation, Max): 55W. Type of transistor: NPN. Vcbo: 600V