NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V - 2SC2713-GR
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 3.69$ | 3.69$ |
| 5 - 9 | 3.51$ | 3.51$ |
| 10 - 24 | 3.40$ | 3.40$ |
| 25 - 49 | 3.32$ | 3.32$ |
| 50 - 99 | 3.25$ | 3.25$ |
| 100 - 249 | 2.72$ | 2.72$ |
| 250 - 305 | 2.63$ | 2.63$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 3.69$ | 3.69$ |
| 5 - 9 | 3.51$ | 3.51$ |
| 10 - 24 | 3.40$ | 3.40$ |
| 25 - 49 | 3.32$ | 3.32$ |
| 50 - 99 | 3.25$ | 3.25$ |
| 100 - 249 | 2.72$ | 2.72$ |
| 250 - 305 | 2.63$ | 2.63$ |
NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V - 2SC2713-GR. NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 700. Minimum hFE gain: 200. Note: screen printing/SMD code DG. Marking on the case: DG. Number of terminals: 3. Pd (Power Dissipation, Max): 150mW. Spec info: complementary transistor (pair) 2SA1163. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 120V. Saturation voltage VCE(sat): 300mV. Original product from manufacturer Toshiba. Quantity in stock updated on 05/06/2025, 03:25.
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