NPN transistor 2N2369A, TO-18 ( TO-206 ), 200mA, 0.2A, TO-18, 40V

NPN transistor 2N2369A, TO-18 ( TO-206 ), 200mA, 0.2A, TO-18, 40V

Quantity
Unit price
1-4
2.63$
5-24
2.34$
25-49
2.15$
50-99
2.01$
100+
1.78$
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Quantity in stock: 43

NPN transistor 2N2369A, TO-18 ( TO-206 ), 200mA, 0.2A, TO-18, 40V. Housing: TO-18 ( TO-206 ). Collector current Ic [A], max.: 200mA. Collector current: 0.2A. Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. Collector-emitter voltage Uceo [V]: 15V. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 675 MHz. FT: 500 MHz. Function: Switching Transistor. Housing (JEDEC standard): TO-18. Ic(pulse): 0.5A. Manufacturer's marking: 2N2369. Max hFE gain: 120. Max temperature: +200°C.. Maximum dissipation Ptot [W]: 0.36W. Minimum hFE gain: 40. Number of terminals: 3. Number of terminals: 3. Operating temperature: -60...+200°C. Pd (Power Dissipation, Max): 0.36W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Tf(max): 15 ns. Tf(min): 15 ns. Type of transistor: NPN. Vcbo: 40V. Original product from manufacturer: Mev. Quantity in stock updated on 10/31/2025, 07:27

Technical documentation (PDF)
2N2369A
32 parameters
Housing
TO-18 ( TO-206 )
Collector current Ic [A], max.
200mA
Collector current
0.2A
Housing (according to data sheet)
TO-18
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
Collector-emitter voltage Uceo [V]
15V
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
675 MHz
FT
500 MHz
Function
Switching Transistor
Housing (JEDEC standard)
TO-18
Ic(pulse)
0.5A
Manufacturer's marking
2N2369
Max hFE gain
120
Max temperature
+200°C.
Maximum dissipation Ptot [W]
0.36W
Minimum hFE gain
40
Number of terminals
3
Number of terminals
3
Operating temperature
-60...+200°C
Pd (Power Dissipation, Max)
0.36W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Tf(max)
15 ns
Tf(min)
15 ns
Type of transistor
NPN
Vcbo
40V
Original product from manufacturer
Mev