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| Quantity in stock: 26 |
NPN transistor 2N3019-ST, 1A, TO-39 ( TO-205 ), TO-39, 80V
Quantity
Unit price
1-4
1.05$
5-49
0.87$
50-99
0.75$
100+
0.69$
| Equivalence available | |
| Quantity in stock: 619 |
NPN transistor 2N3019-ST, 1A, TO-39 ( TO-205 ), TO-39, 80V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. FT: 100 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Technology: 'Planar Epitaxial transistor'. Temperature: +175°C. Type of transistor: NPN. Vcbo: 140V. Vebo: 7V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 07:27
2N3019-ST
20 parameters
Collector current
1A
Housing
TO-39 ( TO-205 )
Housing (according to data sheet)
TO-39
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
FT
100 MHz
Max hFE gain
300
Minimum hFE gain
100
Number of terminals
3
Pd (Power Dissipation, Max)
0.8W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Technology
'Planar Epitaxial transistor'
Temperature
+175°C
Type of transistor
NPN
Vcbo
140V
Vebo
7V
Original product from manufacturer
Stmicroelectronics