NPN transistor 2N3019, TO-39 ( TO-205 ), 1A, 1A, TO-39, 80V

NPN transistor 2N3019, TO-39 ( TO-205 ), 1A, 1A, TO-39, 80V

Quantity
Unit price
1-4
0.77$
5-24
0.65$
25-49
0.57$
50-99
0.52$
100+
0.44$
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Equivalence available
Quantity in stock: 26

NPN transistor 2N3019, TO-39 ( TO-205 ), 1A, 1A, TO-39, 80V. Housing: TO-39 ( TO-205 ). Collector current Ic [A], max.: 1A. Collector current: 1A. Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 60pF. CE diode: no. Collector current Ic [A]: 1A. Collector-emitter voltage Uceo [V]: 80V. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cost): 12pF. Cutoff frequency ft [MHz]: 100 MHz. FT: 100 MHz. Frequency: 100MHz. Function: High Speed ​​Switching. Housing (JEDEC standard): TO-39. Manufacturer's marking: 2N3019. Max hFE gain: 100. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 0.8W. Maximum saturation voltage VCE(sat): 0.2V. Minimum hFE gain: 50. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Polarity: bipolar. Power: 800mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 140V. Vebo: 7V. Voltage (collector - emitter): 140V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 07:27

Technical documentation (PDF)
2N3019
37 parameters
Housing
TO-39 ( TO-205 )
Collector current Ic [A], max.
1A
Collector current
1A
Housing (according to data sheet)
TO-39
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
60pF
CE diode
no
Collector current Ic [A]
1A
Collector-emitter voltage Uceo [V]
80V
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cost)
12pF
Cutoff frequency ft [MHz]
100 MHz
FT
100 MHz
Frequency
100MHz
Function
High Speed ​​Switching
Housing (JEDEC standard)
TO-39
Manufacturer's marking
2N3019
Max hFE gain
100
Max temperature
+175°C.
Maximum dissipation Ptot [W]
0.8W
Maximum saturation voltage VCE(sat)
0.2V
Minimum hFE gain
50
Number of terminals
3
Pd (Power Dissipation, Max)
0.8W
Polarity
bipolar
Power
800mW
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
140V
Vebo
7V
Voltage (collector - emitter)
140V
Original product from manufacturer
Cdil

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