NPN transistor 2N3904, TO-92, 40V, 200mA, 100mA, TO-92, 40V
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NPN transistor 2N3904, TO-92, 40V, 200mA, 100mA, TO-92, 40V. Housing: TO-92. Collector-Emitter Voltage VCEO: 40V. Collector current Ic [A], max.: 200mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 270MHz. C(in): 8pF. CE diode: no. Collector current Ic [A]: 200mA. Collector-Base Voltage VCBO: 60V. Collector-emitter voltage Uceo [V]: 40V. Component family: NPN transistor. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 4pF. Current Max 1: 0.2A. Cutoff frequency ft [MHz]: 300 MHz. DC Collector/Base Gain hFE min.: 30. Darlington transistor?: no. FT: 250 MHz. Frequency: 300MHz. Function: Switching Transistor. Housing (JEDEC standard): -. Ic(pulse): 200mA. Information: -. MSL: -. Manufacturer's marking: 2N3904. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Series: 2N. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Type: Standard. Vcbo: 60V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 01:37