NPN transistor 2N3904, TO-92, 40V, 200mA, 100mA, TO-92, 40V

NPN transistor 2N3904, TO-92, 40V, 200mA, 100mA, TO-92, 40V

Quantity
Unit price
10-49
0.0415$
50-99
0.0357$
100-199
0.0319$
200+
0.0261$
+7842 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 945
Minimum: 10

NPN transistor 2N3904, TO-92, 40V, 200mA, 100mA, TO-92, 40V. Housing: TO-92. Collector-Emitter Voltage VCEO: 40V. Collector current Ic [A], max.: 200mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 270MHz. C(in): 8pF. CE diode: no. Collector current Ic [A]: 200mA. Collector-Base Voltage VCBO: 60V. Collector-emitter voltage Uceo [V]: 40V. Component family: NPN transistor. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 4pF. Current Max 1: 0.2A. Cutoff frequency ft [MHz]: 300 MHz. DC Collector/Base Gain hFE min.: 30. Darlington transistor?: no. FT: 250 MHz. Frequency: 300MHz. Function: Switching Transistor. Housing (JEDEC standard): -. Ic(pulse): 200mA. Information: -. MSL: -. Manufacturer's marking: 2N3904. Max hFE gain: 300. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 100. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Series: 2N. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Type: Standard. Vcbo: 60V. Vebo: 5V. Voltage (collector - emitter): 40V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 01:37

Technical documentation (PDF)
2N3904
53 parameters
Housing
TO-92
Collector-Emitter Voltage VCEO
40V
Collector current Ic [A], max.
200mA
Collector current
100mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
270MHz
C(in)
8pF
CE diode
no
Collector current Ic [A]
200mA
Collector-Base Voltage VCBO
60V
Collector-emitter voltage Uceo [V]
40V
Component family
NPN transistor
Conditioning
Ammo Pack
Configuration
PCB through-hole mounting
Cost)
4pF
Current Max 1
0.2A
Cutoff frequency ft [MHz]
300 MHz
DC Collector/Base Gain hFE min.
30
Darlington transistor?
no
FT
250 MHz
Frequency
300MHz
Function
Switching Transistor
Ic(pulse)
200mA
Manufacturer's marking
2N3904
Max hFE gain
300
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Minimum hFE gain
100
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.5W
Polarity
bipolar
Power
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.25V
Semiconductor material
silicon
Series
2N
Spec info
hFE 100-300 (IC=10mAdc, VCE=1.0Vdc)
Technology
'Epitaxial Planar Die Construction'
Tf(max)
75 ns
Type of transistor
NPN
Type
Standard
Vcbo
60V
Vebo
5V
Voltage (collector - emitter)
40V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10