NPN transistor 2N2219A, TO-39 ( TO-205 ), 800mA, 0.8A, TO-39, 40V

NPN transistor 2N2219A, TO-39 ( TO-205 ), 800mA, 0.8A, TO-39, 40V

Quantity
Unit price
1-4
0.96$
5-24
0.82$
25-49
0.72$
50-99
0.63$
100+
0.51$
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Quantity in stock: 102

NPN transistor 2N2219A, TO-39 ( TO-205 ), 800mA, 0.8A, TO-39, 40V. Housing: TO-39 ( TO-205 ). Collector current Ic [A], max.: 800mA. Collector current: 0.8A. Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 40V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 25pF. CE diode: no. Collector current Ic [A]: 800mA. Collector-emitter voltage Uceo [V]: 40V. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cost): 8pF. Cutoff frequency ft [MHz]: 300 MHz. FT: 300 MHz. Frequency: 250MHz. Housing (JEDEC standard): TO-39. Manufacturer's marking: 2N2219A. Max hFE gain: 300. Max temperature: +200°C.. Maximum dissipation Ptot [W]: 0.8W. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 100. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Polarity: bipolar. Power: 800mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 75V. Vebo: 6V. Voltage (collector - emitter): 60V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 07:27

Technical documentation (PDF)
2N2219A
38 parameters
Housing
TO-39 ( TO-205 )
Collector current Ic [A], max.
800mA
Collector current
0.8A
Housing (according to data sheet)
TO-39
Collector/emitter voltage Vceo
40V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
25pF
CE diode
no
Collector current Ic [A]
800mA
Collector-emitter voltage Uceo [V]
40V
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cost)
8pF
Cutoff frequency ft [MHz]
300 MHz
FT
300 MHz
Frequency
250MHz
Housing (JEDEC standard)
TO-39
Manufacturer's marking
2N2219A
Max hFE gain
300
Max temperature
+200°C.
Maximum dissipation Ptot [W]
0.8W
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
100
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
0.8W
Polarity
bipolar
Power
800mW
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
75V
Vebo
6V
Voltage (collector - emitter)
60V
Original product from manufacturer
Cdil