Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 5.55$ | 5.55$ |
5 - 9 | 5.28$ | 5.28$ |
10 - 24 | 5.00$ | 5.00$ |
25 - 49 | 4.72$ | 4.72$ |
50 - 99 | 4.61$ | 4.61$ |
100 - 122 | 4.07$ | 4.07$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 5.55$ | 5.55$ |
5 - 9 | 5.28$ | 5.28$ |
10 - 24 | 5.00$ | 5.00$ |
25 - 49 | 4.72$ | 4.72$ |
50 - 99 | 4.61$ | 4.61$ |
100 - 122 | 4.07$ | 4.07$ |
STW26NM60N. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 80A. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 26NM60N. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.135 Ohms. RoHS: yes. Weight: 4.51g. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 30. Spec info: Low input capacitance and gate charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.
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