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STW26NM60N

STW26NM60N
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 5.55$ 5.55$
5 - 9 5.28$ 5.28$
10 - 24 5.00$ 5.00$
25 - 49 4.72$ 4.72$
50 - 99 4.61$ 4.61$
100 - 122 4.07$ 4.07$
Quantity U.P
1 - 4 5.55$ 5.55$
5 - 9 5.28$ 5.28$
10 - 24 5.00$ 5.00$
25 - 49 4.72$ 4.72$
50 - 99 4.61$ 4.61$
100 - 122 4.07$ 4.07$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 122
Set of 1

STW26NM60N. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 80A. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 26NM60N. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.135 Ohms. RoHS: yes. Weight: 4.51g. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 30. Spec info: Low input capacitance and gate charge. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

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