FQP13N10

Quantity	excl. VAT	VAT incl.
1 - 4	2.38$	2.38$
5 - 9	2.26$	2.26$
10 - 24	2.15$	2.15$
25 - 49	2.03$	2.03$
50 - 55	1.98$	1.98$

Quantity	U.P
1 - 4	2.38$	2.38$
5 - 9	2.26$	2.26$
10 - 24	2.15$	2.15$
25 - 49	2.03$	2.03$
50 - 55	1.98$	1.98$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 55

Set of 1

FQP13N10. C(in): 345pF. Cost): 100pF. Channel type: N. Conditioning: plastic tube. Quantity per case: 1. Trr Diode (Min.): 72 ns. Type of transistor: MOSFET. Id(imp): 51.2A. ID (T=100°C): 9.05A. ID (T=25°C): 12.8A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 65W. On-resistance Rds On: 0.142 Ohms. RoHS: yes. Weight: 2.07g. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 5 ns. Technology: N-Channel enhancement mode power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Conditioning unit: 50. Function: N-CH/100V/12.8A/0.18 Ohms MOSFET NON MPQ. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!