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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V - 2SK3562

N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V - 2SK3562
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Quantity excl. VAT VAT incl.
1 - 4 2.40$ 2.40$
5 - 9 2.28$ 2.28$
10 - 24 2.16$ 2.16$
25 - 49 2.04$ 2.04$
50 - 85 1.99$ 1.99$
Quantity U.P
1 - 4 2.40$ 2.40$
5 - 9 2.28$ 2.28$
10 - 24 2.16$ 2.16$
25 - 49 2.04$ 2.04$
50 - 85 1.99$ 1.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 85
Set of 1

N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V - 2SK3562. N-channel transistor, 6A, 6A, 100uA, 6A, 0.9 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 6A. ID (T=25°C): 6A. Idss: 100uA. Idss (max): 6A. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1050pF. Cost): 110pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. Marking on the case: K3562. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 16/04/2025, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 4
TK6A60D

TK6A60D

N-channel transistor, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. ...
TK6A60D
N-channel transistor, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 800pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. Marking on the case: K6A60D. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
TK6A60D
N-channel transistor, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 800pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 24A. Marking on the case: K6A60D. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
2.77$ VAT incl.
(2.77$ excl. VAT)
2.77$
Quantity in stock : 69
STP6NK60ZFP

STP6NK60ZFP

N-channel transistor, 3.8A, 6A, 50uA, 1 Ohm, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3.8A. ID (T=25...
STP6NK60ZFP
N-channel transistor, 3.8A, 6A, 50uA, 1 Ohm, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 905pF. Cost): 115pF. Channel type: N. Trr Diode (Min.): 445 ns. Type of transistor: MOSFET. Id(imp): 24A. IDss (min): 1uA. Marking on the case: P6NK60ZFP. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
STP6NK60ZFP
N-channel transistor, 3.8A, 6A, 50uA, 1 Ohm, TO-220FP, TO-220FP, 600V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 905pF. Cost): 115pF. Channel type: N. Trr Diode (Min.): 445 ns. Type of transistor: MOSFET. Id(imp): 24A. IDss (min): 1uA. Marking on the case: P6NK60ZFP. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes
Set of 1
1.68$ VAT incl.
(1.68$ excl. VAT)
1.68$

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