IRFBE30

Quantity	excl. VAT	VAT incl.
1 - 4	2.36$	2.36$
5 - 9	2.24$	2.24$
10 - 24	2.12$	2.12$
25 - 49	2.00$	2.00$
50 - 99	1.96$	1.96$
100 - 112	1.76$	1.76$

Quantity	U.P
1 - 4	2.36$	2.36$
5 - 9	2.24$	2.24$
10 - 24	2.12$	2.12$
25 - 49	2.00$	2.00$
50 - 99	1.96$	1.96$
100 - 112	1.76$	1.76$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 112

Set of 1

IRFBE30. C(in): 1300pF. Cost): 310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 16A. ID (T=100°C): 2.6A. ID (T=25°C): 4.1A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 82 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 16:25.

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Delivery in 2-3 days, with postal tracking!