STP6NK90Z

STP6NK90Z. C(in): 1350pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 840 ns. Type of transistor: MOSFET. Id(imp): 23.2A. ID (T=100°C): 3.65A. ID (T=25°C): 5.8A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P6NK90Z. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 1.56 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: SuperMESH Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 05/04/2025, 10:25.