Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.79$ | 1.79$ |
5 - 9 | 1.70$ | 1.70$ |
10 - 14 | 1.61$ | 1.61$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.79$ | 1.79$ |
5 - 9 | 1.70$ | 1.70$ |
10 - 14 | 1.61$ | 1.61$ |
STP6NK60Z. C(in): 905pF. Cost): 115pF. Channel type: N. Trr Diode (Min.): 445 ns. Type of transistor: MOSFET. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P6NK60Z. Pd (Power Dissipation, Max): 104W. On-resistance Rds On: 1 Ohm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.
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