N-channel FETs and MOSFETs

N-channel transistor, 70A, 80A, 10uA, 0.0095 Ohms, TO-220, TO-220, 75V. ID (T=100°C): 70A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0095 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 75V. C(in): 3700pF. Cost): 730pF. Channel type: N. Trr Diode (Min.): 132 ns. Type of transistor: MOSFET. Function: DC Motor Control, DC-DC & DC-AC Converters. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P75NF75. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 66 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Drain Current (pulsed) IDM--320Ap. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 4A, 6.5A, 6.5A, 1.5 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 6.5A. On-resistance Rds On: 1.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Function: Zener-Protected. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Quantity per case: 1

N-channel transistor, 3.3A, 5.2A, 50uA, 1.5 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss (max): 50uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1138pF. Cost): 122pF. Channel type: N. Trr Diode (Min.): 530 ns. Type of transistor: MOSFET. Id(imp): 20.8A. IDss (min): 1uA. Marking on the case: P7NK80Z. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH™ Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1. Spec info: Zener-Protected. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, PCB soldering, TO-220AB, 800V, 5.2A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 5.2A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P7NK80Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.8 Ohms @ 2.6A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 45 ns. Ciss Gate Capacitance [pF]: 1138pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, TO-220FP, 3.3A, 5.2A, 1uA, 50uA, 1.5 Ohms, TO-220FP, 800V, 1.8 Ohms, 800V. Housing: TO-220FP. ID (T=100°C): 3.3A. ID (T=25°C): 5.2A. Idss: 1uA. Idss (max): 50uA. On-resistance Rds On: 1.5 Ohms. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. On-resistance Rds On: 1.8 Ohms. Drain-source voltage (Vds): 800V. Channel type: N. Type of transistor: MOSFET. Function: 'EXTREMELY HIGH dv/dt CAPABILITY'. Id(imp): 20.8A. IDss (min): 1uA. Marking on the case: P7NK80ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 20 ns. Technology: SuperMESH. Operating temperature: -55...+150°C. Vgs(th) min.: 3.75V. Type of transistor: MOSFET power transistor. Max drain current: 5.2A. Number of terminals: 3. Spec info: Zener-Protected SuperMESH™Power MOSFET. G-S Protection: yes

N-channel transistor, 80A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: SWITCHING APPLICATION. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF06. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -65...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, PCB soldering, TO-220AB, 100V, 80A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 80A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P80NF10. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.012 Ohms @ 40A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 26 ns. Switch-off delay tf[nsec.]: 116 ns. Ciss Gate Capacitance [pF]: 5500pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 60A, 80A, 10uA, 0.013 Ohms, TO-220, TO-220, 120V. ID (T=100°C): 60A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 120V. C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF12. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 40 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 57A, 80A, 10uA, 0.0065 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.0065 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3850pF. Cost): 800pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 320A. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Function: motor control, audio amplifier. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

N-channel transistor, 68A, 98A, 10uA, 0.0098 Ohms, TO-220, TO-220, 68V. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. On-resistance Rds On: 0.0098 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 68V. C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 4.3A, 6.8A, 50uA, 0.9 Ohms, TO-220FP, TO-220FP, 700V. ID (T=100°C): 4.3A. ID (T=25°C): 6.8A. Idss (max): 50uA. On-resistance Rds On: 0.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 700V. C(in): 2350pF. Cost): 180pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 680 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 27A. IDss (min): 1uA. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Td(on): 30 ns. Technology: PowerMESH™III MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: yes

N-channel transistor, 3.9A, 6.2A, 50uA, 1.3 Ohms, TO-220FP, TO220FP, 800V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 50uA. On-resistance Rds On: 1.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO220FP. Voltage Vds(max): 800V. C(in): 1320pF. Cost): 143pF. Channel type: N. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Id(imp): 24.8A. IDss (min): 1uA. Marking on the case: P8NK80ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 17 ns. Technology: SuperMESH™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Zener-Protected, Power MOSFET transistor. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 5.7A, 9A, 9A, 0.8 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: PowerMesh. Quantity per case: 1

N-channel transistor, 4.5A, 7.2A, 50uA, 0.72 Ohms, TO-220, TO-220AC, 500V. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. On-resistance Rds On: 0.72 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AC. Voltage Vds(max): 500V. C(in): 910pF. Cost): 125pF. Channel type: N. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. IDss (min): 1uA. Marking on the case: P9NK50Z. Pd (Power Dissipation, Max): 110W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 4.5A, 7.2A, 50uA, 0.72 Ohms, TO-220FP, TO-220FP, 500V. ID (T=100°C): 4.5A. ID (T=25°C): 7.2A. Idss (max): 50uA. On-resistance Rds On: 0.72 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 500V. C(in): 910pF. Cost): 125pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 238 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28.8A. IDss (min): 1uA. Marking on the case: P9NK50ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 17 ns. Technology: Zener-Protected SuperMESH™ MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 4.4A, 7A, 50uA, 0.85 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. IDss (min): 1us. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Quantity per case: 1

N-channel transistor, PCB soldering, TO-220AB, 600V, 7A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: P9NK60Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.95 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 19 ns. Switch-off delay tf[nsec.]: 43 ns. Ciss Gate Capacitance [pF]: 1100pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 4.4A, 7A, 50uA, 0.85 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 4.4A. ID (T=25°C): 7A. Idss (max): 50uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1110pF. Cost): 135pF. Channel type: N. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 28A. IDss (min): 1uA. Marking on the case: P9NK60ZFP. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 43 ns. Td(on): 19 ns. Technology: Zener-Protected SuperMESH™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, 5A, 8A, 50uA, 1.1 Ohms, TO-220, TO-220AB, 900V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 900V. C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 32A. IDss (min): 1uA. Marking on the case: P9NK90Z. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -50...+150°C. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Channel type: N. Function: 2xN-CH 60V. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: STripFET™ Power MOSFET. Quantity per case: 2

N-channel transistor, 5.7A, 10A, 50uA, 0.65 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1370pF. Cost): 156pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: protected with zener diode. Id(imp): 36A. IDss (min): 1uA. Marking on the case: W10NK60Z. Pd (Power Dissipation, Max): 156W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: protected with zener diode. Id(imp): 36A. IDss (min): 1uA. Marking on the case: W10NK80Z. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes

N-channel transistor, PCB soldering, TO-247, 800V, 9A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W10NK80Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 4.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 65 ns. Ciss Gate Capacitance [pF]: 2180pF. Maximum dissipation Ptot [W]: 160W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 30. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Drain-source protection : yes. G-S Protection: yes