N-channel FETs and MOSFETs

N-channel transistor, 8A, 13A, 50mA, 0.48 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 8A. ID (T=25°C): 13A. Idss (max): 50mA. On-resistance Rds On: 0.48 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 2030pF. Cost): 210pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 40A. IDss (min): 1mA. Marking on the case: W13NK60Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 22 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 7.6A, 14A, 50mA, 0.34 Ohms, TO-247, TO-247, 500V. ID (T=100°C): 7.6A. ID (T=25°C): 14A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. C(in): 2000pF. Cost): 238pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Id(imp): 48A. IDss (min): 1mA. Marking on the case: W14NK50Z. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 24 ns. Technology: Zener-Protected SuperMESH Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 0.55 Ohms, TO-247, 900V. On-resistance Rds On: 0.55 Ohms. Housing: TO-247. Drain-source voltage (Vds): 900V. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 15A. Power: 350W

N-channel transistor, 10.71A, 17A, 100nA, 0.25 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 10.71A. ID (T=25°C): 17A. Idss (max): 100nA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 68A. IDss (min): 10nA. Marking on the case: 18NM80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Technology: MDmesh PpwerMOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 30, 500V, 17A, 0.23 Ohms, TO-247, 500V. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 30. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 17A. On-resistance Rds On: 0.23 Ohms. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NK50Z. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.27 Ohms @ 8.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 190W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 190W. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 28 ns. Technology: SuperMESH™ Power MOSFET Zener-protected. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, PCB soldering, TO-247, 500V, 20A. Housing: PCB soldering. Housing: TO-247. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: W20NM50FD. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 22 ns. Switch-off delay tf[nsec.]: 30 ns. Ciss Gate Capacitance [pF]: 1380pF. Maximum dissipation Ptot [W]: 214W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

N-channel transistor, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1450pF. Cost): 350pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: W20NM60. Number of terminals: 3. Pd (Power Dissipation, Max): 214W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 12.6A, 20A, 100uA, 0.135 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 1800pF. Cost): 115pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 26NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Spec info: Low input capacitance and gate charge. Weight: 4.51g. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 1440pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 384 ns. Function: switching circuits. G-S Protection: yes. Id(imp): 80A. IDss (min): 1uA. Marking on the case: 28N65M2. Pd (Power Dissipation, Max): 170W. Assembly/installation: PCB through-hole mounting. Td(off): 59 ns. Td(on): 13.4 ns. Technology: MDmesh™ M2 Power MOSFETs. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 21A, 34A, 10uA, 0.62 Ohms, TO-247, TO-247, 200V. ID (T=100°C): 21A. ID (T=25°C): 34A. Idss (max): 10uA. On-resistance Rds On: 0.62 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 200V. C(in): 2400pF. Cost): 650pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Function: PowerMESH™ MOSFET. G-S Protection: no. Id(imp): 136A. IDss (min): 1uA. Marking on the case: W34NB20. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: Switch Mode Power Supplies SMPS, DC-AC Converters. Assembly/installation: PCB through-hole mounting. Td(off): 17 ns. Td(on): 30 ns. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 4 v

N-channel transistor, 22A, 35A, 35A, 0.075 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 22A. ID (T=25°C): 35A. Idss (max): 35A. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Idm--140Ap(pulsed). Pd (Power Dissipation, Max): 255W. Assembly/installation: PCB through-hole mounting. Technology: MDmesh II

N-channel transistor, 22A, 35A, 100uA, 0.075 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 22A. ID (T=25°C): 35A. Idss (max): 100uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. C(in): 4300pF. Cost): 250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. G-S Protection: no. Id(imp): 140A. IDss (min): 10uA. Marking on the case: 43NM60ND. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 255W. RoHS: yes. Spec info: Low gate input resistance. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 30 ns. Technology: MDmesh II. Gate/source voltage Vgs: 25V. Vgs(th) min.: 3V

N-channel transistor, 28A, 45A, 100uA, 0.09 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 28A. ID (T=25°C): 45A. Idss (max): 100uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 3800pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 508 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 180A. IDss (min): 10uA. Marking on the case: W45NM60. Number of terminals: 3. Pd (Power Dissipation, Max): 417W. RoHS: yes. Spec info: Idm--180Ap (pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 30 ns. Technology: MDmesh PpwerMOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 3.3A, 5.6A, 50uA, 2.3 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 3.3A. ID (T=25°C): 5.6A. Idss (max): 50uA. On-resistance Rds On: 2.3 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 1250pF. Cost): 128pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 700 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 22.4A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 18 ns. Technology: PowerMESH MOSFET. Operating temperature: -65...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

N-channel transistor, 2.2A, 3.5A, 50uA, 2.7 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 2.2A. ID (T=25°C): 3.5A. Idss (max): 50uA. On-resistance Rds On: 2.7 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 1154pF. Cost): 106pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 605 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 14A. IDss (min): 1uA. Marking on the case: W5NK100Z. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 51.5 ns. Td(on): 22.5 ns. Technology: SuperMESH3™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 3.65A, 5.8A, 50uA, 1.56 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 3.65A. ID (T=25°C): 5.8A. Idss (max): 50uA. On-resistance Rds On: 1.56 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 1350pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 840 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 23.2A. IDss (min): 1uA. Marking on the case: W7NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 5A, 8A, 50uA, 1.1 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 2115pF. Cost): 190pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 950 ns. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: yes. Id(imp): 32A. IDss (min): 1uA. Marking on the case: W9NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 22 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V

N-channel transistor, 12A, 15A, 15A, 0.05 Ohms, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=100°C): 12A. ID (T=25°C): 15A. Idss (max): 15A. On-resistance Rds On: 0.05 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 37W. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Technology: (D-S) 175°C MOSFET, Logic Level

N-channel transistor, PCB soldering, TO-220AB, 30 v, 75A. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 75A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: SUP75N03-04. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.004 Ohms @ 75A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 190 ns. Ciss Gate Capacitance [pF]: 10742pF. Maximum dissipation Ptot [W]: 187W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 85A, 85A, 250uA, 0.003 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 85A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.003 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. C(in): 3535pF. Cost): 680pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Function: Power Supply, DC/DC Converter. G-S Protection: no. Id(imp): 60.4k Ohms. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 78W. RoHS: yes. Spec info: (D-S) 150°C MOSFET. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: TrenchFET® Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V

N-channel transistor, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. C(in): 5500pF. Cost): 100pF. CE diode: no. Channel type: N. Various: flash, stroboscope control. Function: Low-saturation voltage, Ultra high speed switching. Germanium diode: Suppressor. Collector current: 240A. Ic(pulse): 240A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: High speed hall time--tf=270nS(typ). Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 3.6V. Maximum saturation voltage VCE(sat): 5V. Gate/emitter voltage VGE: 33V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V

N-channel transistor, 20A, 10uA, 0.22 Ohms, TO-3PN ( 2-16C1B ), TO-3P, 500V. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.22 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 2600pF. Cost): 280pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1700 ns. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: no. Id(imp): 80A. Marking on the case: K20J50D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 100 ns. Technology: Field Effect POWER MOS Type (MOSVII). Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 800pF. Cost): 100pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Id(imp): 24A. Marking on the case: K6A60D. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 6A, 10uA, 0.95 Ohms, TO-220FP, TO-220F, 650V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 650V. C(in): 1050pF. Cost): 100pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Function: Switching Regulator. G-S Protection: no. Id(imp): 24A. IDss (min): 10uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect Transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

N-channel transistor, 7A, 10uA, 0.50 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 600V. ID (T=25°C): 7A. Idss (max): 10uA. On-resistance Rds On: 0.50 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 600V. C(in): 470pF. Cost): 13pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 230 ns. Type of transistor: MOSFET. Function: for switching mode voltage regulators. G-S Protection: no. Id(imp): 28A. Marking on the case: TK7P60W. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 40 ns. Technology: MOSFET (DTMOSIV). Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.7V. Vgs(th) min.: 2.7V