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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 5.75$ 5.75$
2 - 2 5.46$ 5.46$
3 - 4 5.29$ 5.29$
5 - 9 5.17$ 5.17$
10 - 19 5.06$ 5.06$
20 - 29 4.89$ 4.89$
30 - 59 4.71$ 4.71$
Quantity U.P
1 - 1 5.75$ 5.75$
2 - 2 5.46$ 5.46$
3 - 4 5.29$ 5.29$
5 - 9 5.17$ 5.17$
10 - 19 5.06$ 5.06$
20 - 29 4.89$ 4.89$
30 - 59 4.71$ 4.71$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 59
Set of 1

N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V - STW11NK90Z. N-channel transistor, 5.8A, 9.2A, 50uA, 0.82 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 5.8A. ID (T=25°C): 9.2A. Idss (max): 50uA. On-resistance Rds On: 0.82 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 3000pF. Cost): 240pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 584 ns. Type of transistor: MOSFET. Function: ZenerProtect. G-S Protection: yes. Id(imp): 36.8A. IDss (min): 1uA. Marking on the case: W11NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 76 ns. Td(on): 30 ns. Technology: SuperMesh PpwerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 05/06/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 38
STW11NK100Z

STW11NK100Z

N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=...
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. G-S Protection: yes. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
STW11NK100Z
N-channel transistor, 5.2A, 8.3A, 50uA, 1.1 Ohms, TO-247, TO-247, 1000V. ID (T=100°C): 5.2A. ID (T=25°C): 8.3A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 1000V. C(in): 3500pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 560 ns. Type of transistor: MOSFET. Function: extremely high dv/dt capability, Switching applications. G-S Protection: yes. Id(imp): 33.2A. IDss (min): 1uA. Marking on the case: W11NK100Z. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: Gate source ESD (HBM-C=100pF, R=1.5KW) 6000V. Assembly/installation: PCB through-hole mounting. Td(off): 98 ns. Td(on): 27 ns. Technology: Zener - Protected SuperMESH™ PowerMOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
Set of 1
5.38$ VAT incl.
(5.38$ excl. VAT)
5.38$

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