Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 7.32$ | 7.32$ |
2 - 2 | 6.95$ | 6.95$ |
3 - 4 | 6.73$ | 6.73$ |
5 - 9 | 6.59$ | 6.59$ |
10 - 19 | 6.44$ | 6.44$ |
20 - 29 | 6.22$ | 6.22$ |
30+ | 6.00$ | 6.00$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 7.32$ | 7.32$ |
2 - 2 | 6.95$ | 6.95$ |
3 - 4 | 6.73$ | 6.73$ |
5 - 9 | 6.59$ | 6.59$ |
10 - 19 | 6.44$ | 6.44$ |
20 - 29 | 6.22$ | 6.22$ |
30+ | 6.00$ | 6.00$ |
N-channel transistor, 10.71A, 17A, 100nA, 0.25 Ohms, TO-247, TO-247, 800V - STW18NM80. N-channel transistor, 10.71A, 17A, 100nA, 0.25 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 10.71A. ID (T=25°C): 17A. Idss (max): 100nA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 1630pF. Cost): 750pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : Zener diode. Quantity per case: 1. Type of transistor: MOSFET. Function: switching circuits. G-S Protection: no. Id(imp): 68A. IDss (min): 10nA. Marking on the case: 18NM80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Assembly/installation: PCB through-hole mounting. Technology: MDmesh PpwerMOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 04/06/2025, 03:25.
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