N-channel FETs and MOSFETs

N-channel transistor, PCB soldering (SMD), SOT-23, 30 v, 1.7A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.7A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: NDS355AN_NL. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.125 Ohms @ 1.7A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 195pF. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, SO, SO-8. Housing: SO. Housing (according to data sheet): SO-8. Function: N MOSFET transistor. Number of terminals: 8. Assembly/installation: surface-mounted component (SMD). Technology: 2xV-MOS. Quantity per case: 2

N-channel transistor, 82A, 1uA, 4.1m Ohms, D2PAK ( TO-263 ), MP-25ZP, 55V. ID (T=25°C): 82A. Idss (max): 1uA. On-resistance Rds On: 4.1m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): MP-25ZP. Voltage Vds(max): 55V. C(in): 6400pF. Cost): 465pF. Channel type: N. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 328A. IDss (min): 1uA. Marking on the case: 82N055. Temperature: +175°C. Pd (Power Dissipation, Max): 142W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 72 ns. Td(on): 40 ns. Technology: MOSFET transistor. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 900. Spec info: MOSFET transistor. G-S Protection: no

N-channel transistor, 10A, 20A, 10uA, 0.039 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=100°C): 10A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.039 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 707pF. Cost): 224pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 60A. IDss (min): 1uA. Marking on the case: 20N6LG. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 9.6 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Spec info: IDM--60A pulse/10uS. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 20A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 20A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 20N06LG. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.048 Ohms @ 10A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 50 ns. Ciss Gate Capacitance [pF]: 990pF. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 12A, 12A, 0.084 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.084 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Channel type: N. Type of transistor: MOSFET. Id(imp): 45A. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Function: ID pulse 45A/10us. Quantity per case: 1. Note: screen printing/SMD code 55094G

N-channel transistor, 9A, 9A, 0.122 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.122 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. Channel type: N. Type of transistor: MOSFET. Id(imp): 27A. Pd (Power Dissipation, Max): 29W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Function: ID pulse 27A/10us. Quantity per case: 1. Note: screen printing/SMD code 3150G

N-channel transistor, 12A, 12A, 0.089 Ohms, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V. ID (T=25°C): 12A. Idss (max): 12A. On-resistance Rds On: 0.089 Ohms. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. Channel type: N. Type of transistor: MOSFET. Id(imp): 45A. Pd (Power Dissipation, Max): 48W. Assembly/installation: PCB through-hole mounting. Technology: Power MOSFET. Note: 55L104G. Function: logic level, ID pulse 45A/10us. Quantity per case: 1

N-channel transistor, 12A, 10uA, 0.089 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ), 60V. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.089 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ) ( DPAK-5 ). Voltage Vds(max): 60V. C(in): 316pF. Cost): 105pF. Channel type: N. Trr Diode (Min.): 35 ns. Type of transistor: MOSFET. Id(imp): 45A. IDss (min): 1uA. Pd (Power Dissipation, Max): 48W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 9.2 ns. Technology: Power MOSFET. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: logic level, ID pulse 45A/10us. Quantity per case: 1. Note: screen printing/SMD code 55L104G. Drain-source protection : yes. G-S Protection: no

N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 12A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 12A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 55L104G. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.104 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 40 ns. Ciss Gate Capacitance [pF]: 440pF. Maximum dissipation Ptot [W]: 48W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

N-channel transistor, 96A, 124A, 10uA, 3.4M Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 96A. ID (T=25°C): 124A. Idss (max): 10uA. On-resistance Rds On: 3.4M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 4490pF. Cost): 952pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. Id(imp): 230A. IDss (min): 1uA. Marking on the case: 4804NG. Pd (Power Dissipation, Max): 107W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 18 ns. Technology: Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1.5V. Number of terminals: 2. Quantity per case: 1. Note: screen printing/SMD code 4804NG. Spec info: ID pulse 230A. G-S Protection: no

N-channel transistor, 5.1A, 25uA, TSOP, TSOP-6, 20V, 0.036 Ohms. ID (T=25°C): 5.1A. Idss (max): 25uA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. On-resistance Rds On: 0.036 Ohms. C(in): 510pF. Cost): 200pF. Channel type: N. Conditioning: roll. Drain-source protection : diode. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Id(imp): 20A. IDss (min): 1uA. Marking on the case: 446. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 9 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V. Number of terminals: 6. Function: Lithium Ion Battery Applications, Notebook PC. Quantity per case: 1. Conditioning unit: 3000. Spec info: Gate control by logic level. G-S Protection: no

N-channel transistor, 83A, 118A, 250uA, 0.02 Ohms, TO-247, TO-247-3L, CASE 340CX, 900V. ID (T=100°C): 83A. ID (T=25°C): 118A. Idss (max): 250uA. On-resistance Rds On: 0.02 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247-3L, CASE 340CX. Voltage Vds(max): 900V. C(in): 4416pF. Cost): 296pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Id(imp): 472A. IDss (min): 100uA. Pd (Power Dissipation, Max): 503W. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 40 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 19V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Technology: MOSFET – SiC Power, Single N-Channel. Function: UPS, DC/DC Converter, Boost Inverter. Spec info: IDSC--854A, TA=25°C, tp=10us, RG=4.7ohm. Drain-source protection : yes. G-S Protection: no

N-channel transistor, 38A, 53A, 53A, 7.6m Ohms, SO, SO-8FL, 30 v. ID (T=100°C): 38A. ID (T=25°C): 53A. Idss (max): 53A. On-resistance Rds On: 7.6m Ohms. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 108A. Marking on the case: 4744N. Number of terminals: 8. Pd (Power Dissipation, Max): 47W. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Function: ID pulse 108A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4744N

N-channel transistor, 138A, 191A, 191A, 1.3M Ohms, SO, SO-8FL, 30 v. ID (T=100°C): 138A. ID (T=25°C): 191A. Idss (max): 191A. On-resistance Rds On: 1.3M Ohms. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 288A. Marking on the case: 4833N. Number of terminals: 8. Pd (Power Dissipation, Max): 114W. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Function: ID pulse 288A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4833N

N-channel transistor, 75A, 104A, 104A, 2.9m Ohms, SO, SO-8FL, 30 v. ID (T=100°C): 75A. ID (T=25°C): 104A. Idss (max): 104A. On-resistance Rds On: 2.9m Ohms. Housing: SO. Housing (according to data sheet): SO-8FL. Voltage Vds(max): 30 v. Channel type: N. Type of transistor: MOSFET. Id(imp): 208A. Marking on the case: 4835N. Number of terminals: 8. Pd (Power Dissipation, Max): 63W. Assembly/installation: surface-mounted component (SMD). Technology: Power MOSFET. Function: ID pulse 208A/10ms. Quantity per case: 1. Note: screen printing/SMD code 4835N

N-channel transistor, 8A, 10A, 1uA, 10A, 0.03 Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 40V. ID (T=100°C): 8A. ID (T=25°C): 10A. Idss: 1uA. Idss (max): 10A. On-resistance Rds On: 0.03 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 40V. C(in): 790pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 40A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11.8 ns. Td(on): 2.2 ns. Technology: Field Effect Transistor. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

N-channel transistor, 30A, 0.1uA, 30A, TO-220, TO-220AB, 0.014 Ohms. ID (T=25°C): 30A. Idss: 0.1uA. Idss (max): 30A. Housing: TO-220. Housing (according to data sheet): TO-220AB. On-resistance Rds On: 0.014 Ohms. C(in): 860pF. Cost): 450pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 16 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 50A, 50uA, 50A, 5.1M Ohms, TO-263 (D2PAK). ID (T=25°C): 50A. Idss: 50uA. Idss (max): 50A. On-resistance Rds On: 5.1M Ohms. Housing (according to data sheet): TO-263 (D2PAK). C(in): 2780pF. Cost): 641pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 34 ns. Type of transistor: MOSFET. Id(imp): 100A. Pd (Power Dissipation, Max): 59.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 35 ns. Td(on): 8 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 35A, 50A, 25uA, 50A, 15m Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss: 25uA. Idss (max): 50A. On-resistance Rds On: 15m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. C(in): 1200pF. Cost): 600pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 150A. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 6 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 50A, 75A, 25uA, 75A, 5M Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V. ID (T=100°C): 50A. ID (T=25°C): 75A. Idss: 25uA. Idss (max): 75A. On-resistance Rds On: 5M Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. C(in): 5000pF. Cost): 1800pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 170A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 7 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

N-channel transistor, 30A, 45A, 10uA, 0.016 Ohms, D2PAK ( TO-263 ), SOT-404, 25V. ID (T=100°C): 30A. ID (T=25°C): 45A. Idss (max): 10uA. On-resistance Rds On: 0.016 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Voltage Vds(max): 25V. C(in): 920pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 52 ns. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 86W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 78 ns. Td(on): 6 ns. Technology: TrenchMOS transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 15V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no

N-channel transistor, 45A, 45A, 0.016 Ohms, TO-220, TO-220, 25V. ID (T=25°C): 45A. Idss (max): 45A. On-resistance Rds On: 0.016 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 25V. Channel type: N. Type of transistor: MOSFET. Function: Field effect power transistor. Logic level control. Id(imp): 180A. Pd (Power Dissipation, Max): 86W. Assembly/installation: PCB through-hole mounting. Technology: TrenchMOS transistor. Quantity per case: 1

N-channel transistor, 6.2A, 8.7A, 8.7A, 0.4 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 6.2A. ID (T=25°C): 8.7A. Idss (max): 8.7A. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 88W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS SOT78

N-channel transistor, PCB soldering (SMD), SOT-23, TO-236AB, 100V, 1.9A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.9A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: PMV213SN. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 5.5 ns. Switch-off delay tf[nsec.]: 9.5 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C