N-channel transistor, 36A, 50A, 500uA, TO-220, TO-220AB ( SOT78 ), 150V, 30 milliOhms - PSMN035-150P

Quantity	excl. VAT	VAT incl.
1 - 4	4.06$	4.06$
5 - 9	3.85$	3.85$
10 - 24	3.65$	3.65$
25 - 49	3.45$	3.45$
50 - 99	3.37$	3.37$
100 - 249	3.28$	3.28$
250+	3.16$	3.16$

Quantity	U.P
1 - 4	4.06$	4.06$
5 - 9	3.85$	3.85$
10 - 24	3.65$	3.65$
25 - 49	3.45$	3.45$
50 - 99	3.37$	3.37$
100 - 249	3.28$	3.28$
250+	3.16$	3.16$

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Set of 1

N-channel transistor, 36A, 50A, 500uA, TO-220, TO-220AB ( SOT78 ), 150V, 30 milliOhms - PSMN035-150P. N-channel transistor, 36A, 50A, 500uA, TO-220, TO-220AB ( SOT78 ), 150V, 30 milliOhms. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 150V. On-resistance Rds On: 30 milliOhms. C(in): 4720pF. Cost): 456pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: IDM--200A (Tmb 25°C; pulsed). G-S Protection: no. Quantity in stock updated on 19/04/2025, 18:25.

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