Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.06$ | 4.06$ |
5 - 9 | 3.85$ | 3.85$ |
10 - 24 | 3.73$ | 3.73$ |
25 - 49 | 3.65$ | 3.65$ |
50 - 99 | 3.57$ | 3.57$ |
100 - 249 | 3.45$ | 3.45$ |
250+ | 3.33$ | 3.33$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.06$ | 4.06$ |
5 - 9 | 3.85$ | 3.85$ |
10 - 24 | 3.73$ | 3.73$ |
25 - 49 | 3.65$ | 3.65$ |
50 - 99 | 3.57$ | 3.57$ |
100 - 249 | 3.45$ | 3.45$ |
250+ | 3.33$ | 3.33$ |
N-channel transistor, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V - PSMN035-150P. N-channel transistor, 36A, 50A, 500uA, 30 milliOhms, TO-220, TO-220AB ( SOT78 ), 150V. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. On-resistance Rds On: 30 milliOhms. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Voltage Vds(max): 150V. C(in): 4720pF. Cost): 456pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 200A. IDss (min): 0.05uA. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: IDM--200A (Tmb 25°C; pulsed). Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 08/06/2025, 05:25.
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